Fri, 12 Dec 2015
Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and directed into the wafer, typically to form the source and drain regions of the transistor.
Wed, 10 Oct 2013
Results can depend on the properties of the wafers used, the conditions of the implant, the conditions of the anneal process, and even the measurement technique.
Tue, 3 Mar 2011
Using implant as a precision material modification in contrast to its traditional role as a semiconductor dopant tool, provides enabling technology and new applications. James L. Kawski, Varian Semiconductor Equipment Associates, Gloucester, MA USA
Mon, 10 Oct 2014
A novel metal gate integration scheme to achieve precise threshold voltage (VT) control for multiple VTs is described.
Tue, 2 Feb 2016
How Texas Instruments got greener, safer and saved money.