letter-materials-top

Topic Index

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0-9


Imec boosts performance of beyond-silicon devices

Thu, 12 Dec 2015
At this week’s IEEE IEDM conference, nano-electronics research center imec demonstrates record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm Silicon and explores emerging tunnel devices based on optimization of the same III-V compound semiconductor.

It's all about packaging - in this material world, who is your partner?

Thu, 11 Nov 2015
With the emergence of the IoT (Internet of Things), advanced packaging is clearly the enabling technology providing solutions for mobile applications and for semiconductor devices fabricated at 16 nm and below process nodes.

A wild ride in 2015 - and two steps forward in 2016

Thu, 1 Jan 2016
“In like a lion, out like a lamb” is just half the story for 2015. While initial expectations forecasted a double-digit growth year, the world economy faded and dragged our industry down to nearly flat 2015/2014 results.

Switchable material could enable new memory chips

Wed, 1 Jan 2016
Two MIT researchers have developed a thin-film material whose phase and electrical properties can be switched between metallic and semiconducting simply by applying a small voltage.

Semiconductor R&D growth slows in 2015

Thu, 1 Jan 2016
Industry-wide R&D expenditures grew 0.5% to a record-high $56.4 billion in 2015. Top 10 R&D spenders collectively increased expenditures by nearly 2% in the year.

Global semiconductor sales top $335B in 2015

Mon, 2 Feb 2016
The Semiconductor Industry Association (SIA) today announced the global semiconductor industry posted sales totaling $335.2 billion in 2015, a slight decrease of 0.2 percent compared to the 2014 total, which was the industry's highest-ever sales total.

Helium reduction at pre-metal sub-atmospheric CVD

Mon, 2 Feb 2016
A novel SACVD PMD invention sets the benchmark for helium reduction efforts by achieving four key objectives: cost reduction, quality, process robustness and productivity.

Another record year for silicon wafer shipment volumes in 2015

Wed, 2 Feb 2016
Worldwide silicon wafer area shipments increased 3 percent in 2015 when compared to 2014 area shipments according to the SEMI Silicon Manufacturers Group (SMG) in its year-end analysis of the silicon wafer industry.

Engineering material magic

Mon, 2 Feb 2016
University of Utah engineers have discovered a new kind of 2D semiconducting material for electronics that opens the door for much speedier computers and smartphones that also consume a lot less power.

Neon shortage coming

Thu, 2 Feb 2016
Semiconductor lithographic use of Neon is increasing more rapidly than expected for several reasons including the delay of EUVL while demand for finer line width patterning is increasing.

High-K precursors for ICs to reach ~$400M by 2020

Mon, 3 Mar 2016
Chemical precursors (inorganic and organic) used to form high dielectric constant (High-K) materials, metals and metal nitrides needed in advanced ICs are forecasted to reach $400M USD in global sales by 2020, as highlighted in TECHCET’s 2016 Critical Materials Report.

Chipmakers seek solution to neon gas supply shortage

Wed, 3 Mar 2016
Finding a short term solution to the neon gas shortage problem will be challenging.

Effective graphene doping depends on substrate material

Tue, 3 Mar 2016
Juelich physicists have discovered unexpected effects in doped graphene - i.e. graphene that is mixed with foreign atoms.

Managing hazardous process exhausts in high volume manufacturing

Wed, 3 Mar 2016
Integrated sub-fab systems allow HVM fab operators to safely and efficiently implement new processes containing hazardous process chemicals.

Packaging materials: Strong growth rates for small form factors

Wed, 4 Apr 2016
While much of the recent attention has been focused on the growth of wafer level packages (WLPs), specifically fan-out WLPs, this is not the only segment forecast to undergo strong unit growth.

Spintronic majority gates: A new paradigm for scaling

Tue, 4 Apr 2016
Spintronic majority gates could revolutionize circuit design. They will completely change the paradigm – both at device and circuit level – in how to approach scaling.

Quantum dots enhance light-to-current conversion in layered semiconductors

Fri, 4 Apr 2016
Harnessing the power of the sun and creating light-harvesting or light-sensing devices requires a material that both absorbs light efficiently and converts the energy to highly mobile electrical current.

Exploring phosphorene, a promising new material

Tue, 5 May 2016
Researchers have developed a new method to quickly and accurately determine the orientation of phosphorene, a promising material with potential application as a material for semiconducting transistors in ever faster and more powerful computers.

Global semiconductor sales increase slightly in March

Fri, 5 May 2016
The Semiconductor Industry Association (SIA) this week announced worldwide sales of semiconductors reached $26.1 billion for the month of March 2016, a slight increase of 0.3 percent compared to the previous month's total of $26.0 billion.

Researchers integrate diamond/boron nitride crystalline layers for high-power devices

Tue, 5 May 2016
Materials researchers at North Carolina State University have developed a new technique to deposit diamond on the surface of cubic boron nitride (c-BN), integrating the two materials into a single crystalline structure.

Novel functionalized nanomaterials for CO2 capture

Tue, 5 May 2016
Climate change due to excessive CO2 levels is one of the most serious problems mankind has ever faced. CO2 emissions need to be reduced urgently to avoid potentially dangerous and irreversible effects of climate change. To mitigate such emissions, CO2 capture is one of the best solutions. Scientists at the Tata Institute of Fundamental Research, Mumbai, have developed novel functionalized nanomaterials that can capture CO2 with superior capture capacity and stability over conventional sorbents.

EUVL: Taking it down to 5nm

Tue, 5 May 2016
The semiconductor industry is nothing if not persistent — it’s been working away at developing extreme ultraviolet lithography (EUVL) for many years.

First quarter 2016 silicon wafer shipments increase quarter-over-quarter

Tue, 5 May 2016
Worldwide silicon wafer area shipments increased during the first quarter 2016 when compared to fourth quarter 2015 area shipments according to the SEMI Silicon Manufacturers Group (SMG) in its quarterly analysis of the silicon wafer industry.

Imec expands its silicon platform for quantum computing applications

Wed, 5 May 2016
At the Quantum Europe conference, taking place in Amsterdam, Belgian's nanoelectronincs research center imec announced today that it is ramping-up its R&D activities focused on quantum computing.

IBM scientists achieve storage memory breakthrough

Wed, 5 May 2016
For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).

Equipment spending up: 19 new fabs and lines to start construction

Fri, 6 Jun 2016
While semiconductor fab equipment spending is off to a slow start in 2016, it is expected to gain momentum through the end of the year. For 2016, 1.5 percent growth over 2015 is expected while 13 percent growth is forecast in 2017.

Imec demonstrates gate-all-around MOSFETs with lateral silicon nanowires at scaled dimensions

Thu, 6 Jun 2016
Today, at the 2016 Symposia on VLSI Technology & Circuits, nano-electronics research center imec presented gate-all-around (GAA) n- and p-MOSFET devices made of vertically stacked horizontal silicon (Si) nanowires (NWs) with a diameter of only 8nm.

Accelerate and de-risk materials decisions for semiconductor R&D with IMI Labs from Intermolecular

Tue, 6 Jun 2016
Intermolecular, Inc. today announced IMI Labs for Semiconductor, a materials innovation service to help semiconductor companies explore, discover and characterize new materials.

HITRS roadmap aims to integrate photonic devices in SiP

Wed, 6 Jun 2016
A new roadmap, the Heterogeneous Integration Technology Roadmap for Semiconductors (HITRS), aims to integrate fast optical communication made possible with photonic devices.

Electronic gases market undergoing major shifts

Thu, 6 Jun 2016
Techcet forecasts $3.9B gas business for 2016.

Record 10.4 BSI of silicon wafer shipped as revenues slip

Fri, 7 Jul 2016
The 2015 market for semiconductor silicon wafers fell 5.3% to $7.2B on a record 10.4 BSI Si shipped, according to a new report, "Silicon Wafers Market & Supply Chain 2016, a TECHCET Critical Materials Report."

Easier, faster, cheaper: A full-filling approach to making nanotubes of consistent quality

Fri, 7 Jul 2016
Approach opens a straightforward route for engineering the properties of single-wall carbon nanotubes.

Integration of novel materials with silicon chips makes new 'smart' devices possible

Thu, 7 Jul 2016
Researchers from North Carolina State University and the U.S. Army Research Office have developed a way to integrate novel functional materials onto a computer chip, allowing the creation of new smart devices and systems.

Utah and Minnesota engineers discover highly conductive materials for more efficient electronics

Wed, 7 Jul 2016
Engineers from the University of Utah and the University of Minnesota have discovered that interfacing two particular oxide-based materials makes them highly conductive, a boon for future electronics that could result in much more power-efficient laptops, electric cars and home appliances that also don't need cumbersome power supplies.

Smarter self-assembly opens new pathways for nanotechnology

Mon, 8 Aug 2016
To continue advancing, next-generation electronic devices must fully exploit the nanoscale, where materials span just billionths of a meter. But balancing complexity, precision, and manufacturing scalability on such fantastically small scales is inevitably difficult.

Transmitting energy in soft materials

Tue, 8 Aug 2016
A new way to send mechanical signals through soft materials.

Extending tungsten metallization for next-generation devices

Mon, 8 Aug 2016
Recent breakthroughs in materials engineering of low-resistance W barriers/liners and bulk fill are making it possible to extend W use to next-generation devices.

Ensuring safety in the sub-fab

Tue, 8 Aug 2016
Problems frequently arise as a result of an incomplete or absent formal risk assessment when processes are modified or new materials introduced.

For first time, carbon nanotube transistors outperform silicon

Tue, 9 Sep 2016
For the first time, University of Wisconsin-Madison materials engineers have created carbon nanotube transistors that outperform state-of-the-art silicon transistors.

Tuning materials and devices to adapt to their environment

Tue, 9 Sep 2016
University of California, Santa Barbara researchers pursue future radio-frequency materials and devices.

Top 5 takeaways from SEMI Strategic Materials Conference

Thu, 9 Sep 2016
As the rate of traditional scaling slows, the chip sector looks increasingly to materials and design to move forward on multiple paths for multiple applications. Figuring out more effective ways to collaborate across silos will be crucial.

iPhone 7 materials costs higher than previous versions

Thu, 9 Sep 2016
The bill of materials (BOM) for an iPhone 7 equipped with 32 gigabytes (GB) of NAND flash memory carries $219.80 in bill of materials costs, according to a preliminary estimate from IHS Markit.

Graphene cracks the glass corrosion problem

Tue, 10 Oct 2016
Researchers at the Center for Multidimensional Carbon Materials (CMCM), within the Institute for Basic Science (IBS) have demonstrated graphene coating protects glass from corrosion.

Researchers find way to tune thermal conductivity of 2-D materials

Fri, 10 Oct 2016
Researchers have found an unexpected way to control the thermal conductivity of two-dimensional (2-D) materials, which will allow electronics designers to dissipate heat in electronic devices that use these materials.

New perovskite solar cell design could outperform existing commercial technologies

Fri, 10 Oct 2016
Stanford, Oxford team creates high-efficiency tandem cells.

Making silicon-germanium core fibers a reality

Tue, 10 Oct 2016
Laser recrystallization can create functional materials for faster transistors, optical transmission.

Researchers surprised at the unexpected hardness of gallium nitride

Mon, 10 Oct 2016
A Lehigh University team discovers that the widely used semiconducting material is almost as wear-resistant as diamonds.

van der Pauw and Hall voltage measurements with a parameter analyzer

Mon, 10 Oct 2016
van der Pauw measurements with a parameter analyzer are examined followed by a look at Hall effects measurements.

Nano-scale electronics score laboratory victory

Thu, 11 Nov 2016
NYU Tandon researchers pioneer technique to grow monolayer tungsten disulfide for next-generation transistors, wearable electronics, and biomedical devices.

Perovskite solar cells hit new world efficiency record

Thu, 12 Dec 2016
12.1 percent efficiency for 16 cm2 cell is the largest single to be independently certified with highest energy conversion efficiency.

Making graphene using laser-induced phase separation

Fri, 12 Dec 2016
IBS & KAIST researchers clarify how laser annealing technology can lead to production of ultra thin nanomaterials.

Global semiconductor sales increase 5% year-over-year in October

Thu, 12 Dec 2016
The global semiconductor market has rebounded in recent months, with October marking the largest year-to-year sales increase since March 2015.

Rapid and mass production of graphene, using microwaves

Tue, 12 Dec 2016
Graphene, a material that could usher in the next generation of electronic and energy devices, could be closer than ever to mass production, thanks to microwaves.

World's smallest radio receiver has building blocks the size of 2 atoms

Fri, 12 Dec 2016
Researchers from the Harvard John A. Paulson School of Engineering and Applied Sciences have made the world's smallest radio receiver - built out of an assembly of atomic-scale defects in pink diamonds.

New material with ferroelectricity and ferromagnetism may lead to better computer memory

Wed, 12 Dec 2016
Scientists at Tokyo Institute of Technology (Tokyo Tech) have demonstrated that ferroelectricity and ferromagnetism coexist at room temperature in thin films of bismuth-iron-cobalt oxide. The research could have implications in the next generation of computer memory and sensors.

Global semiconductor sales up 7% year-to-year

Wed, 1 Jan 2017
The Semiconductor Industry Association (SIA) today announced worldwide sales of semiconductors reached $31.0 billion for the month of November 2016, an increase of 7.4 percent compared to the November 2015 total.

Germanium's semiconducting and optical properties probed under pressure

Wed, 1 Jan 2017
Germanium may not be a household name like silicon, its group-mate on the periodic table, but it has great potential for use in next-generation electronics and energy technology.

Illinois team advances GaN-on-Silicon for scalable high electron mobility transistors

Mon, 1 Jan 2017
A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device

SUNY Poly-managed research named a top ten physics breakthrough

Wed, 1 Jan 2017
Research paves the way for more efficient 'on-off' switch that could someday replace transistors.

Do not go where the path may lead

Fri, 1 Jan 2017
What follows, in Part 1 of this two-part article, is a quick look back at the industry in 2016 and the road ahead in 2017 followed by what SEMI achieved in 2016 and where SEMI’s road will lead in 2017 to keep pace our industry charging forward where there is no path.

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

Fri, 2 Feb 2017
A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology have demonstrated the world-wide first transistor based on germanium that can be programmed between electron- (n) and hole- (p) conduction.

Annual silicon volume shipments remain at record highs

Tue, 2 Feb 2017
Revenues continue to be under pressure.

Penn researchers are among the first to grow a versatile 2-dimensional material

Thu, 2 Feb 2017
University of Pennsylvania researchers are now among the first to produce a single, three-atom-thick layer of a unique two-dimensional material called tungsten ditelluride.

A new spin on electronics

Wed, 2 Feb 2017
Information transport by spin as an alternative to conventional computing technology.

Breakthrough in 'wonder' materials paves way for flexible tech

Thu, 2 Feb 2017
Gadgets are set to become flexible, highly efficient and much smaller, following a breakthrough in measuring two-dimensional 'wonder' materials by the University of Warwick.

'Lossless' metamaterial could boost efficiency of lasers and other light-based devices

Fri, 2 Feb 2017
Engineers at the University of California San Diego have developed a material that could reduce signal losses in photonic devices.

Technavio reports top three drivers promoting growth for the carbon nanotube market

Fri, 3 Mar 2017
Technavio analysts forecast the global carbon nanotube (CNT) market to grow at a staggering CAGR of almost 22% during the forecast period, according to their latest report.

Polymer-coated silicon nanosheets as an alternative to graphene

Wed, 3 Mar 2017
Researchers at the Technical University of Munich (TUM) have, for the first time ever, produced a composite material combining silicon nanosheets and a polymer that is both UV-resistant and easy to process.

New material helps record data with light

Thu, 3 Mar 2017
Russian physicists, with their colleagues from Europe through changing the light parameters, learned to generate quasiparticles - excitons, which were fully controllable and also helped to record information at room temperature.

Penn engineers' 'photonic doping' makes class of metamaterials easier to fabricate

Fri, 3 Mar 2017
Now, University of Pennsylvania engineers have shown a way to make metamaterials with a single inclusion, providing easier fabrication, among other useful features.

Sandia National Laboratories creates 3-D metasurfaces with optical possibilities

Fri, 3 Mar 2017
The new Sandia metamaterials can be fabricated in multiple layers to form complex, three-dimensional meta-atoms that reflect more light than shiny gold surfaces, usually considered the ultimate in infrared reflectivity. The III-V materials also emit photons when excited -- something that silicon, which can reflect, transmit and absorb -- can't do.

Reusable carbon nanotubes could be the water filter of the future, says RIT study

Thu, 3 Mar 2017
A new class of carbon nanotubes could be the next-generation clean-up crew for toxic sludge and contaminated water, say researchers at Rochester Institute of Technology.

Advances make reduced graphene oxide electronics feasible

Thu, 3 Mar 2017
Researchers at North Carolina State University have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices.

Built from the bottom up, nanoribbons pave the way to 'on-off' states for graphene

Fri, 3 Mar 2017
A new way to grow narrow ribbons of graphene, a lightweight and strong structure of single-atom-thick carbon atoms linked into hexagons, may address a shortcoming that has prevented the material from achieving its full potential in electronic applications.

SEMI reports 2016 global semiconductor materials sales of $44.3B

Mon, 4 Apr 2017
SEMI today announced that the global semiconductor materials market increased 2.4 percent in 2016 compared to 2015 while worldwide semiconductor revenues increased 1.1 percent.

PolyU develops novel semiconductor nanofiber with superb charge conductivity

Thu, 4 Apr 2017
The Department of Mechanical Engineering of The Hong Kong Polytechnic University (PolyU) has developed a novel technology of embedding highly conductive nanostructure into semiconductor nanofiber.

Wonder material? Novel nanotube structure strengthens thin films for flexible electronics

Mon, 4 Apr 2017
Reflecting the structure of composites found in nature and the ancient world, researchers at the University of Illinois at Urbana-Champaign have synthesized thin carbon nanotube (CNT) textiles that exhibit both high electrical conductivity and a level of toughness that is about fifty times higher than copper films, currently used in electronics.

Galaxy S8 materials costs highest by far compared to previous versions, IHS Markit teardown reveals

Tue, 4 Apr 2017
The new Samsung Galaxy S8 equipped with 64 gigabytes (GB) of NAND flash memory carries a bill of materials (BOM) cost that comes out to US$301.60, much higher than for previous versions of the company’s smartphones, according to a preliminary estimate from IHS Markit.

Discovery of new PVD chalcogenide materials for memory applications

Fri, 4 Apr 2017
A case study is presented based on the use of high throughput experimentation (HTE) for the discovery of new memory materials.

Chemically tailored graphene

Tue, 5 May 2017
Graphene is considered as one of the most promising new materials. However, the systematic insertion of chemically bound atoms and molecules to control its properties is still a major challenge. Now, for the first time, scientists of the Friedrich-Alexander-Universität Erlangen-Nürnberg, the University of Vienna, the Freie Universität Berlin and the University Yachay Tech in Ecuador succeeded in precisely verifying the spectral fingerprint of such compounds in both theory and experiment.

At last: Beautiful, consistent carbon belts

Thu, 5 May 2017
Synthesis of a carbon nanobelt with potential applications in nanotechnology.