letter-wafer-tech

Topic Index

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Biodegradable, flexible silicon transistors

Tue, 6 Jun 2015
Wisconsin researchers have developed a new biodegradable silicon transistor based on a material derived from wood, opening the door for green, flexible, low-cost portable electronics in future.

A silicon replacement? USC Viterbi School of Engineering overcomes major issue in carbon nanotube tech

Mon, 6 Jun 2014
Researchers from the USC Viterbi School of Engineering describe how they have overcome a major issue in carbon nanotube technology by developing a flexible, energy-efficient hybrid circuit combining carbon nanotube thin film transistors with other thin film transistors.

SPTS and CEA-Leti/Nanoelec collaborate on 3D-TSV

Tue, 6 Jun 2014
SPTS Technologies, a manufacturer of etch, deposition and thermal processing equipment for the semiconductor industry, today announced that it has signed an agreement with CEA-Leti in Grenoble, France, to develop 3D-TSV technologies.

ConFab panelists discuss optimizing R&D in the changing semi landscape

Tue, 6 Jun 2014
Overheard @The ConFab: “I feel the best I’ve felt about semi since 2009.” –Mike Noonen, Silicon Catalyst

Stanford engineers envision an electronic switch just 3 atoms thick

Tue, 7 Jul 2014
Computer simulation shows how to make a crystal that would toggle like a light switch between conductive and non-conductive structures; this could lead to flexible electronic materials and enable a cell phone to be woven into a shirt.

EVG clears key barriers to 3DIC/TSV HVM with fusion wafer bonding solution

Mon, 6 Jun 2014
EV Group today unveiled the GEMINI FB XT—its next-generation fusion wafer bonding platform, which combines several performance breakthroughs to move the semiconductor industry closer to the goal of high-volume manufacturing (HVM) of 3D-ICs with through-silicon vias (TSVs).

Gigaphoton develops world's first helium-free purge process for ArF immersion lasers

Mon, 6 Jun 2014
Gigaphoton Inc., a major lithography light source manufacturer, announced today that it has succeeded in the development of an innovative purge process, one that does not use the rare gas helium, for its flagship "GT Series" of ArF immersion lasers.

Bending the rules

Tue, 7 Jul 2014
A UCSB postdoctoral scholar in physics discovers a counterintuitive phenomenon: the coexistence of superconductivity with dissipation.

Columbia researchers observe tunable quantum behavior in bilayer graphene

Thu, 7 Jul 2014
Columbia researchers have observed the fractional quantum Hall effect in bilayer graphene and shown that this exotic state of matter can be tuned by an electric field.

Making dreams come true : Making graphene from plastic?

Thu, 7 Jul 2014
Recently, a domestic research team developed a carbon material without artificial defects commonly found during the production process of graphene while maintaining its original characteristics.

Entegris launches ultra clean filter for semiconductor manufacturing

Tue, 7 Jul 2014
Entegris, Inc. announced the latest addition to its Torrento family of ultra clean liquid filtration solutions used in the semiconductor manufacturing process.

CEA-Leti: Monolithic 3D is the solution for further scaling

Mon, 7 Jul 2014
Hughes Metras, Leti’s VP of Strategic Partnerships North America, introduced the lead talk at their SemiconWest 2014 Leti Day about monolithic 3D technology as the "solution for scaling."

Fundamental chemistry findings could help extend Moore’s Law

Wed, 7 Jul 2014
A Berkeley Lab-Intel collaboration outlines the chemistry of photoresist, enabling smaller features for future generations of microprocessors.

A new multi-bit 'spin' for MRAM storage

Wed, 7 Jul 2014
Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM, which relies on manipulating the magnetization of materials for data storage rather than electronic charges, boasts all of these advantages as an emerging technology, but so far it hasn't been able to match flash memory in terms of storage density.

A*STAR and industry partners form S$200M semiconductor R&D joint labs

Thu, 7 Jul 2014
Four joint laboratories, representing a commitment of S$200m between private and public sectors, were launched today between A*STAR's Institute of Microelectronics (IME), and its 10 industry partners.

Superfast stress inspection for overlay control

Mon, 7 Jul 2014
Tighter overlay requirements are motivating device manufacturers to explore new ways to characterize and manage overlay to improve yield.

New material allows for ultra-thin solar cells

Mon, 8 Aug 2014
Extremely thin, semi-transparent, flexible solar cells could soon become reality.

Taking great ideas from the lab to the fab

Tue, 8 Aug 2014
NSF and Intel support the development of domain-specific hardware to address health care needs.

SRC, UC Davis explore new materials and device structures to develop next-generation “Race Track Memory” technologies

Tue, 8 Aug 2014
University of California, Davis researchers sponsored by Semiconductor Research Corporation (SRC), a university-research consortium for semiconductors and related technologies, are exploring new materials and device structures to develop next-generation memory technologies.

Notre Dame paper offers insights into a new class of semiconducting materials

Tue, 8 Aug 2014
A new paper by University of Notre Dame researchers describes their investigations of the fundamental optical properties of a new class of semiconducting materials known as organic-inorganic "hybrid" perovskites.

Pairing old technologies with new for next-generation electronic devices

Tue, 8 Aug 2014
UCL scientists have discovered a new method to efficiently generate and control currents based on the magnetic nature of electrons in semiconducting materials, offering a radical way to develop a new generation of electronic devices.

Gigaphoton unveils new function that enables 50% reduction of neon gas consumption for ArF immersion lasers

Mon, 8 Aug 2014
Gigaphoton Inc., a lithography light source manufacturer, today unveils a new function, called “eTGM,” available for its flagship high-output GT Series of ArF immersion laser products.

JEDEC releases LPDDR4 Standard for low power memory devices

Mon, 8 Aug 2014
JEDEC Solid State Technology Association today announced the publication of JESD209-4 Low Power Double Data Rate 4 (LPDDR4).

Scientists craft a semiconductor only three atoms thick

Wed, 8 Aug 2014
Scientists have developed what they believe is the thinnest-possible semiconductor, a new class of nanoscale materials made in sheets only three atoms thick.

Competition for graphene

Wed, 8 Aug 2014
A new argument has just been added to the growing case for graphene being bumped off its pedestal as the next big thing in the high-tech world by the two-dimensional semiconductors known as MX2 materials.

A new, tunable device for spintronics

Fri, 8 Aug 2014
An international team of scientists including physicist Jairo Sinova from the University of Mainz realises a tunable spin-charge converter made of GaAs.

Samsung adopts ProPlus Designs' 14nm finFET process

Wed, 9 Sep 2014
ProPlus Design Solutions, Inc. today announced Samsung Electronics has extended its partnership with ProPlus through the deployment of ProPlus' BSIMProPlus modeling platform for its 14-nanometer (nm) FinFET SPICE modeling.

Contour Semiconductor awarded three new U.S. patents

Thu, 9 Sep 2014
Contour Semiconductor, Inc., a developer of non-volatile memory technologies, today announced it has been awarded three new patents to back its Diode Transistor Memory (DTM) technology, the world's lowest production-cost, non-volatile memory technology.

UCSB researchers develop ultra sensitive biosensor from molybdenite semiconductor

Thu, 9 Sep 2014
Move over, graphene. An atomically thin, two-dimensional, ultrasensitive semiconductor material for biosensing developed by researchers at UC Santa Barbara promises to push the boundaries of biosensing technology in many fields, from health care to environmental protection to forensic industries.

GLOBALFOUNDRIES and SRC announce new scholarship for undergraduate engineering students

Tue, 9 Sep 2014
GLOBALFOUNDRIES, a provider of advanced semiconductor manufacturing technology, today announced the “GLOBALFOUNDRIES Undergraduate Research Scholarship,” a new scholarship recognizing and rewarding aspiring, leadership-oriented engineering students interested in careers in the semiconductor industry.

Sidense demonstrates working one-time programmable bit cells in TSMC 16nm finFET technology

Fri, 9 Sep 2014
Sidense Corp., a developer of non-volatile memory OTP IP cores, today announced that it successfully demonstrated read and write capability for its 1T-OTP bit-cell architecture on test silicon fabricated in a 16nm CMOS FinFET process.

Layered graphene sandwich for next generation electronics

Mon, 9 Sep 2014
Sandwiching layers of graphene with white graphene could produce designer materials capable of creating high-frequency electronic devices, University of Manchester scientists have found.

Doped graphene nanoribbons with potential

Mon, 9 Sep 2014
Researchers from Empa and the Max Planck Institute for Polymer Research have now developed a new method to selectively dope graphene molecules with nitrogen atoms.

Fermilab implements Ziptronix's DBI hybrid bonding in high-end 3D image sensors

Tue, 9 Sep 2014
Ziptronix Inc. today announced that its Direct Bond Interconnect (DBI) hybrid bonding has been implemented by Fermi National Accelerator Laboratory (Fermilab) to improve the performance of high-end 3D sensor arrays, which are used for particle detection in large-scale particle physics and x-ray imaging experiments.

A fundamental truth of process control

Tue, 9 Sep 2014
You can’t fix what you can’t find. You can’t control what you can’t measure.

Beautiful, brilliant people

Wed, 9 Sep 2014
It would be difficult to overstate how critical the development of a workable, high volume manufacturing EUV lithography solution is to the semiconductor industry.

NSF and SRC announce research awards to 10 universities

Tue, 9 Sep 2014
The National Science Foundation (NSF) and Semiconductor Research Corporation (SRC) today announced nine research awards to 10 universities totaling nearly $4 million under a joint program focused on Secure, Trustworthy, Assured and Resilient Semiconductors and Systems (STARSS).

Element Six selected by European Consortium as a partner to develop ultrafast pulse disk lasers

Tue, 9 Sep 2014
Element Six today announced it has been selected by the European Commission’s Seventh Framework Programme for Research and Technological Development to help develop a new ultrafast pulse disk laser.

Veeco Ion Beam Deposition technology reaches significant milestone to support EUV commercialization roadmap

Wed, 9 Sep 2014
Veeco Instruments Inc. announced today that its new Odyssey Ion Beam Deposition (IBD) Upgrade for the NEXUS IBD-LDD System has repeatedly produced photomask blanks with zero deposition defects larger than 70nm.

Rudolph introduces new acoustic metrology and defect inspection technology

Thu, 9 Sep 2014
Rudolph Technologies has introduced its new SONUS Technology for measuring thick films and film stacks used in copper pillar bumps and for detecting defects, such as voids, in through silicon vias (TSVs).

For electronics beyond silicon, a new contender emerges

Thu, 9 Sep 2014
Silicon has few serious competitors as the material of choice in the electronics industry. Yet transistors, the switchable valves that control the flow of electrons in a circuit, cannot simply keep shrinking to meet the needs of powerful, compact devices; physical limitations like energy consumption and heat dissipation are too significant.

Northeastern University researchers develop novel method for working with nanotubes

Fri, 9 Sep 2014
Northeastern University researchers have developed a novel method for controllably constructing precise inter-nanotube junctions and a variety of nanocarbon structures in carbon nanotube arrays.

Physicists heat freestanding graphene to control curvature of ripples

Mon, 9 Sep 2014
An international team of physicists, led by a research group at the University of Arkansas, has discovered that heating can be used to control the curvature of ripples in freestanding graphene.

NANIUM launches the industry’s largest WLCSP in volume production

Tue, 9 Sep 2014
NANIUM today announced it has successfully launched the industry’s largest Wafer-Level Chip Scale Package (WLCSP) in volume.

Future flexible electronics based on carbon nanotubes

Wed, 9 Sep 2014
Study in Applied Physics Letters show how to improve nanotube transistor and circuit performance with fluoropolymers

Southampton scientists grow a new challenger to graphene

Wed, 9 Sep 2014
A team of researchers from the University of Southampton's Optoelectronics Research Centre (ORC) has developed a new way to fabricate a potential challenger to graphene.

New discovery could pave the way for spin-based computing

Fri, 9 Sep 2014
A University of Pittsburgh research team has discovered a way to fuse these two distinct properties in a single material, paving the way for new ultrahigh density storage and computing architectures.

Gigaphoton introduces "eGrycos" for ArF immersion lasers

Mon, 9 Sep 2014
Gigaphoton Inc., a lithography light source manufacturer, announced today that it has completed development of an electricity-reduction technology for its flagship “GT Series” of argon fluoride (ArF) immersion lasers used for semiconductor lithography processing.

A new dimension for integrated circuits: 3D nanomagnetic logic

Tue, 9 Sep 2014
Electrical engineers at the Technische Universität München (TUM) have demonstrated a new kind of building block for digital integrated circuits.

New technology may lead to prolonged power in mobile devices

Tue, 9 Sep 2014
Researchers from The University of Texas at Dallas have created technology that could be the first step toward wearable computers with self-contained power sources or, more immediately, a smartphone that doesn’t die after a few hours of heavy use.

FlipChip International creates 250 multi-product wafer bump designs

Wed, 10 Oct 2014
FlipChip International (FCI), the global technology leader in flip chip bumping and advanced wafer level packaging, announced that their engineering team had completed design and production of the 250th Multi-Product Wafer Bump design since January 2013.

Dow Corning releases new 150mm SiC wafers

Thu, 10 Oct 2014
Dow Corning, a developer of silicon and wide-bandgap semiconductor technology, announced that it now offers 150mm diameter silicon carbide (SiC) wafers under its Prime Grade portfolio.

Photomask Technology speaker says EUV is nearly production-ready

Fri, 10 Oct 2014
Highlights at the recent SPIE Photomask Technology 2014 conference included a confident announcement from ASML about current EUV source capabilities, an insightful industry-expert panel discussion on mask-making complexities, and fresh energy from the co-located SPIE Scanning Microscopies conference.

Crumpled graphene could provide an unconventional energy storage

Fri, 10 Oct 2014
Two-dimensional carbon 'paper' can form stretchable supercapacitors to power flexible electronic devices.

EV Group unveils room-temperature covalent bonder

Mon, 10 Oct 2014
EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today introduced the EVG 580 ComBond.

Albert Theuwissen of Harvest Imaging honored with European SEMI Award 2014

Wed, 10 Oct 2014
Albert Theuwissen, CEO of Harvest Imaging and professor at Delft University of Technology, is the recipient of the European SEMI Award 2014.

Intel and IBM to lay out 14nm FinFET strategies on competing substrates at IEDM 2014

Thu, 10 Oct 2014
The development of increasingly sophisticated and energy-efficient CMOS technology for mobile, client and cloud computing depends on a continuing stream of advances in the process technologies with which the complex integrated circuits are built.

Special UO microscope captures defects in nanotubes

Tue, 10 Oct 2014
University of Oregon chemists have devised a way to see the internal structures of electronic waves trapped in carbon nanotubes by external electrostatic charges.

EUV light source developer Adlyte achieves key performance milestone for high-volume manufacturing

Wed, 10 Oct 2014
Adlyte Inc., a developer of high-brightness extreme light sources for advanced semiconductor inspection and metrology applications, today announced it has reached a key performance benchmark for its extreme ultraviolet (EUV) light source for high-volume manufacturing (HVM)-readiness.

SMIC and Maxscend collaborate on 55nm RF IP platform

Thu, 10 Oct 2014
Semiconductor Manufacturing International Corporation and Maxscend Technologies Inc., a RF IP company based in China, announced that Maxscend Bluetooth RF IP has been silicon proven on SMIC's 55nm low leakage logic process.

TSMC, Kilopass deliver non-volatile memory for the 16nm finFET process node

Tue, 10 Oct 2014
Kilopass Technology Inc., a provider of semiconductor logic embedded non-volatile memory (eNVM) intellectual property (IP), announced today that it has successfully ported its one-time programmable (OTP) NVM technology to TSMC's 16 nanometer (nm) FinFET process.

Imec presents back-side illuminated CMOS image sensor with UV-optimized antireflective coating

Tue, 11 Nov 2014
At this week’s VISION 2014 exhibition, imec presents a backside-illuminated (BSI) CMOS image sensor chip featuring a new anti-reflective coating (ARC) optimized for UV light.

Rice chemists gain edge in next-generation energy

Tue, 11 Nov 2014
Rice University scientists who want to gain an edge in energy production and storage report they have found it in molybdenum disulfide.

'Nanomotor lithography' answers call for affordable, simpler device manufacturing

Tue, 11 Nov 2014
Nanoengineers at the University of California, San Diego recently invented a new method of lithography in which nanoscale robots swim over the surface of light-sensitive material to create complex surface patterns that form the sensors and electronics components on nanoscale devices.

On-demand conductivity for graphene nanoribbons

Mon, 11 Nov 2014
New research may help to develop graphene-based electronic devices that only become conductors when an external ultra-short pulse is applied, and are otherwise insulators.

Freescale and Intel processors now active at Rochester Electronics

Tue, 11 Nov 2014
Rochester Electronics, a fully-authorized manufacturer and distributor of semiconductors, will launch 2015 with the re-introduction of many popular processors from Freescale and Intel.

New way to move atomically thin semiconductors for use in flexible devices

Thu, 11 Nov 2014
Researchers from North Carolina State University have developed a new way to transfer thin semiconductor films, which are only one atom thick, onto arbitrary substrates, paving the way for flexible computing or photonic devices.

Revolutionary solar-friendly form of silicon shines

Tue, 11 Nov 2014
Silicon is the second most-abundant element in the earth's crust. When purified, it takes on a diamond structure, which is essential to modern electronic devices--carbon is to biology as silicon is to technology. A team of Carnegie scientists led by Timothy Strobel has synthesized an entirely new form of silicon, one that promises even greater future applications.

New process isolates promising material

Tue, 11 Nov 2014
Molybdenum disulfide has emerged as a leading successor to graphene.

UO-industry collaboration points to improved nanomaterials

Fri, 11 Nov 2014
A potential path to identify imperfections and improve the quality of nanomaterials for use in next-generation solar cells has emerged from a collaboration of University of Oregon and industry researchers.

Physicists and chemists work to improve digital memory technology

Mon, 11 Nov 2014
The improvements in random access memory that have driven many advances of the digital age owe much to the innovative application of physics and chemistry at the atomic scale.

GIGAPHOTON provides new function for 50% reduction of neon gas consumption for ArF immersion laser users

Tue, 11 Nov 2014
Gigaphoton Inc., a lithography light source manufacturer, today announces the provision of a new function, called “eTGM (eco-Total Gas Management),” for the existing users of its flagship high-output GT Series of ArF immersion laser products free of charge for a fixed period of time.

Research yields material made of single-atom layers that snap together like Legos

Tue, 11 Nov 2014
Physicists at the University of Kansas have fabricated an innovative substance from two different atomic sheets that interlock much like Lego toy bricks.

Protons fuel graphene prospects

Wed, 11 Nov 2014
Published in the journal Nature, the discovery could revolutionise fuel cells and other hydrogen-based technologies as they require a barrier that only allow protons - hydrogen atoms stripped off their electrons - to pass through.

Van der Waals force re-measured

Wed, 11 Nov 2014
Although the van der Waals force was discovered around 150 years ago, it is still difficult to quantify when predicting the behaviour of solids, liquids, and molecules.

EV Group establishes nanoimprint lithography competence center for photonic applications

Mon, 12 Dec 2014
EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today announced that it has established the NILPhotonics Competence Center.

Cymer announces its new XLR 700ix DUV light source

Mon, 12 Dec 2014
Cymer, LLC, an ASML company, a supplier of light sources used by chipmakers to pattern advanced semiconductor chips, today announced its new argon fluoride (ArF) immersion light source, the XLR 700ix.

SEMATECH reports significant progress in EUV resist outgas testing

Wed, 12 Dec 2014
​SEMATECH announced today that promising progress has been made in qualifying outgassing specifications for extreme ultraviolet (EUV) lithography.

Imec partners with Huawei on high-bandwidth optical data link technology

Wed, 12 Dec 2014
Nanoelectronics research center imec and global ICT leader Huawei announced today that they have taken a further step in their strategic partnership focusing on optical data link technology.

High photosensitivity 2-D-few-layered molybdenum diselenide phototransistors

Mon, 12 Dec 2014
Two-dimensional (2D) layered materials are now attracting a lot of interest due to their unique optoelectronic properties at atomic thicknesses.

Crossbar to demonstrate resistive RRAM innovation at IEDM 2014

Tue, 12 Dec 2014
Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (RRAM) at next week’s IEEE International Electron Devices Meeting (IEDM).

Entegris launches next generation of 450mm wafer carriers

Wed, 12 Dec 2014
Entegris, Inc., a developer of yield-enhancing materials and solutions for highly advanced manufacturing environments, announced the release and global availability of their next generation of 450mm wafer carrier solutions (P2) for the safe and reliable transport of 450mm wafers used in semiconductor manufacturing.

Holst Centre and imec develop thin-film hybrid oxide-organic microprocessor

Thu, 12 Dec 2014
Holst Centre, imec and their partner Evonik have realized a general-purpose 8-bit microprocessor, manufactured using complementary thin-film transistors (TFTs) processed at temperatures compatible with plastic foil substrates (250°C).

Stacking 2-dimensional materials may lower cost of semiconductor devices

Fri, 12 Dec 2014
A team of researchers led by North Carolina State University has found that stacking materials that are only one atom thick can create semiconductor junctions that transfer charge efficiently, regardless of whether the crystalline structure of the materials is mismatched - lowering the manufacturing cost for a wide variety of semiconductor devices such as solar cells, lasers and LEDs.

Scientists measure speedy electrons in silicon

Fri, 12 Dec 2014
An international team of physicists and chemists based at the University of California, Berkeley, has for the first time taken snapshots of this ephemeral event using attosecond pulses of soft x-ray light lasting only a few billionths of a billionth of a second.

Lead islands in a sea of graphene magnetize the material of the future

Tue, 12 Dec 2014
Researchers in Spain have discovered that if lead atoms are intercalated on a graphene sheet, a powerful magnetic field is generated by the interaction of the electrons' spin with their orbital movement.

Piezoelectricity in a 2-D semiconductor

Mon, 12 Dec 2014
Berkeley Lab researchers discovery of piezoelectricty in molybdenum disulfide holds promise for future MEMS.

Hands on: Crafting ultrathin color coatings

Mon, 12 Dec 2014
In Harvard's high-tech cleanroom, applied physicists produce vivid optical effects on paper.

HLMC develops specialty technology in pursuit of growing IoT market

Mon, 1 Jan 2015
Chinese IC manufacturer Shanghai Huali Microelectronics Corporation gave a presentation on its outlook for the Internet of Things (IoT) market and the wide application of its specialty technology at the 2014 China Semiconductor Industry Association IC Design Branch Annual Conference ("ICCAD"), which was recently held at Hong Kong Science Park.

Freshmen-level chemistry solves the solubility mystery of graphene oxide films

Tue, 1 Jan 2015
A Northwestern University-led team recently found the answer to a mysterious question that has puzzled the materials science community for years--and it came in the form of some surprisingly basic chemistry.

Shedding light on why blue LEDS are so tricky to make

Thu, 1 Jan 2015
Scientists at UCL, in collaboration with groups at the University of Bath and the Daresbury Laboratory, have uncovered the mystery of why blue light-emitting diodes (LEDs) are so difficult to make, by revealing the complex properties of their main component - gallium nitride - using sophisticated computer simulations.

Silicon Space Technology partners with GLOBALFOUNDRIES to deliver processors and memory solutions

Fri, 1 Jan 2015
Silicon Space Technology, an industry innovator in high-temp and rad-hard embedded system solutions, announced today the company has partnered with GLOBALFOUNDRIES to build commercial-ready products for extreme environments and applications.

Graphene plasmons go ballistic

Mon, 1 Jan 2015
Graphene combined with the insulting power of boron nitride enables light control in tiny circuits with dramatically reduced energy loss.

Zinc oxide materials tapped for tiny energy harvesting devices

Tue, 1 Jan 2015
New research helps pave the way toward highly energy-efficient zinc oxide-based micro energy harvesting devices with applications in portable communications, healthcare and environmental monitoring, and more.

UC Berkeley Extension launches three online programs in semiconductor technology

Thu, 1 Jan 2015
UC Berkeley Extension announces three online integrated circuit (IC) semiconductor technology programs to meet the training needs of the surging worldwide semiconductor industry; the industry is predicted to reach $345 billion in sales this year.

AKHAN Semiconductor first to invent fully transparent circuit creation process

Thu, 1 Jan 2015
Adam Khan, founder and CEO of AKHAN Semiconductor, Inc. was granted a US patent by the US Patent and Trademark Office today for a groundbreaking process that adheres diamond, the only truly transparent semiconductor, to metals and alloys (including transparent metals) in a way that allows for reliable wire bonding and high conductivity.

Solving an organic semiconductor mystery

Fri, 1 Jan 2015
Berkeley Lab researchers uncover hidden structures in domain interfaces that hamper performance.

Rice-sized laser, powered one electron at a time, bodes well for quantum computing

Fri, 1 Jan 2015
Princeton University researchers have built a rice grain-sized laser powered by single electrons tunneling through artificial atoms known as quantum dots.

Carbon nanotube finding could lead to flexible electronics with longer battery life

Fri, 1 Jan 2015
University of Wisconsin-Madison materials engineers have made a significant leap toward creating higher-performance electronics with improved battery life -- and the ability to flex and stretch.

Silver nanowires demonstrate unexpected self-healing mechanism

Fri, 1 Jan 2015
With its high electrical conductivity and optical transparency, indium tin oxide is one of the most widely used materials for touchscreens, plasma displays, and flexible electronics. But its rapidly escalating price has forced the electronics industry to search for other alternatives.

Researchers at Penn, UC Berkeley and Illinois use oxides to flip graphene conductivity

Tue, 1 Jan 2015
Graphene, a one-atom thick lattice of carbon atoms, is often touted as a revolutionary material that will take the place of silicon at the heart of electronics. The unmatched speed at which it can move electrons, plus its essentially two-dimensional form factor, make it an attractive alternative, but several hurdles to its adoption remain.

New Soitec eSI90 RF-SOI wafer improves RF performance of high-end smart phone components

Mon, 1 Jan 2015
Soitec (Euronext) has introduced its eSI90 substrate, the newest high-end wafer in its radio-frequency silicon-on-insulator (RF-SOI) product family.

New pathway to valleytronics

Tue, 1 Jan 2015
A potential avenue to quantum computing currently generating quite the buzz in the high-tech industry is "valleytronics," in which information is coded based on the wavelike motion of electrons moving through certain two-dimensional (2D) semiconductors.

New method allows for greater variation in band gap tunability

Fri, 1 Jan 2015
If you can't find the ideal material, then design a new one.

Breakthrough may lead to industrial production of graphene devices

Mon, 2 Feb 2015
With properties that promise faster computers, better sensors and much more, graphene has been dubbed the 'miracle material'. But progress in producing it on an industrial scale without compromising its properties has proved elusive.

One-atom-thin silicon transistors hold promise for super-fast computing

Mon, 2 Feb 2015
Researchers at The University of Texas at Austin's Cockrell School of Engineering have created the first transistors made of silicene, the world's thinnest silicon material.

Precision growth of light-emitting nanowires

Tue, 2 Feb 2015
A novel approach to growing nanowires promises a new means of control over their light-emitting and electronic properties.

Improving the reliability of dry vacuum pumps in high-k ALD processes

Tue, 2 Feb 2015
Design features that contributed most to the improved performance include increased rotational speed, integrated rotor sleeves, and increased purge injection temperature.

Ghent University and imec demonstrate interaction between light and sound in nanoscale waveguide

Tue, 2 Feb 2015
Silicon photonics enables extreme light-matter interaction.

Gigaphoton achieves continuous 140W EUV light source output at 50% duty cycle

Tue, 2 Feb 2015
Further contributing to the realization of a mass production-quality LPP light source for EUV scanners

A new spin on spintronics

Tue, 2 Feb 2015
A team of researchers from the University of Michigan and Western Michigan University is exploring new materials that could yield higher computational speeds and lower power consumption, even in harsh environments.

KLA-Tencor extends its 5D patterning control solution with new metrology systems

Thu, 2 Feb 2015
Today, KLA- Tencor Corporation introduced two advanced metrology systems that support the development and production of 16nm and below IC devices: Archer 500LCM and SpectraFilm LD10.

Penn researchers develop new technique for making molybdenum disulfide

Fri, 2 Feb 2015
University of Pennsylvania researchers have made an advance in manufacturing one such material, molybdenum disulphide.

Cymer announces shipment of its first XLR 700ix DUV light source and introduces DynaPulse

Mon, 2 Feb 2015
Cymer, an ASML company, a developer of lithography light sources used by chipmakers to pattern advanced semiconductor chips, today announced the shipment of its first XLR 700ix light source.

Applied Materials unveils breakthrough e-beam metrology tool for finFET transistors and 3D NAND devices

Mon, 2 Feb 2015
At the SPIE Advanced Lithography conference in San Jose, Calif., Applied Materials, Inc., today announced the industry's first in-line 3D CD SEM metrology tool for solving the challenges of measuring the high aspect ratio and complex features of 3D NAND and FinFET devices.

Radio chip for the 'Internet of things'

Tue, 2 Feb 2015
At this year's Consumer Electronics Show in Las Vegas, the big theme was the "Internet of things" -- the idea that everything in the human environment, from kitchen appliances to industrial equipment, could be equipped with sensors and processors that can exchange data, helping with maintenance and the coordination of tasks.

UT Dallas technology could make night vision, thermal imaging affordable

Wed, 3 Mar 2015
Semiconductors made in CMOS technology reach nearly 10 terahertz.

Graphene meets heat waves

Fri, 3 Mar 2015
In the race to miniaturize electronic components, researchers are challenged with a major problem: the smaller or the faster your device, the more challenging it is to cool it down.

Squeezing out new science from material interfaces

Mon, 3 Mar 2015
With more than five times the thermal conductivity of copper, diamond is the ultimate heat spreader. But the slow rate of heat flow into diamond from other materials limits its use in practice.

CEA-Leti announces launch of Silicon Impulse IC design competence center

Tue, 3 Mar 2015
CEA-Leti today announced the launch of its Silicon Impulse IC design competence center, a comprehensive IC technology platform offering IC design, advanced intellectual property, emulator and test services along with industrial multi-project wafer (MPW) shuttles.

Mid-IR frequency combs enable high resolution spectroscopy for sensitive gas sensing

Tue, 3 Mar 2015
The results are an important step towards a small-footprint chip scale mid-infrared frequency comb source.

EV Group releases new configurations to its high-vacuum wafer bonding technology

Tue, 3 Mar 2015
EV Group introduced two new configurations to its EVG 580 ComBond series of automated high-vacuum covalent wafer bonding systems.

Notchless wafer standard approved

Tue, 3 Mar 2015
450mm notchless wafer standardization has been under discussion for over a year.

MACOM announces new 650 W GaN on SiC HEMT pulsed power transistor

Wed, 3 Mar 2015
M/A-COM Technology Solutions Inc. today announced a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications.

Rice fine-tunes quantum dots from coal

Wed, 3 Mar 2015
Rice University scientists gain control of electronic, fluorescent properties of coal-based graphene.

NC State researchers create 'nanofiber gusher'

Thu, 3 Mar 2015
Engineers and researchers at North Carolina State University and one of its start-up companies have now reported a method that can produce unprecedented amounts of polymer nanofibers, which have potential applications in filtration, batteries and cell scaffolding.

UW scientists build a nanolaser using a single atomic sheet

Tue, 3 Mar 2015
University of Washington scientists have built a new nanometer-sized laser -- using the thinnest semiconductor available today -- that is energy efficient, easy to build and compatible with existing electronics.

'Goldilocks material' could change spintronics

Tue, 3 Mar 2015
Attempting to develop a novel type of permanent magnet, a team of researchers at Trinity College in Dublin, Ireland has discovered a new class of magnetic materials based on Mn-Ga alloys.

Imec demonstrates 50GHz Ge waveguide electro-absorption modulator

Wed, 3 Mar 2015
At this week’s OFC 2015, the largest global conference and exposition for optical communications, nanoelectronics research center imec, its associated lab at Ghent University (Intec), and Stanford University have demonstrated a compact germanium (Ge) waveguide electro-absorption modulator (EAM) with a modulation bandwidth beyond 50GHz.

Micron and Intel unveil new 3D NAND flash memory

Thu, 3 Mar 2015
Micron Technology, Inc. and Intel Corporation today revealed the availability of their 3D NAND technology, the world’s highest-density flash memory.

Chemists make new silicon-based nanomaterials

Fri, 3 Mar 2015
Chemists from Brown University have come up with a way to make new nanomaterials from a silicon-based compound.

Solving molybdenum disulfide's 'thin' problem

Fri, 3 Mar 2015
Research team increases material's light emission by twelve times.

Pibond introduces a new product line for logic, memory, power and MEMS devices

Wed, 4 Apr 2015
Targeting 10nm node semiconductor processing, 3D NAND, power ICs as well as MEMS applications, this technology enables advanced device manufacturing through reduced cost of ownership (COO) and simplified processing.

Future electronics based on carbon nanotubes

Tue, 4 Apr 2015
The exceptional properties of tiny molecular cylinders known as carbon nanotubes have tantalized researchers for years because of the possibility they could serve as a successors to silicon in laying the logic for smaller, faster and cheaper electronic devices.

Techniques for simplifying pulsed measurements: Part 2

Wed, 4 Apr 2015
Common pulsed measurement challenges are defined.

Graphene looking promising for future spintronic devices

Fri, 4 Apr 2015
Researchers at Chalmers University of Technology have discovered that large area graphene is able to preserve electron spin over an extended period, and communicate it over greater distances than had previously been known.

New understanding of electromagnetism could enable 'antennas on a chip'

Fri, 4 Apr 2015
A team of researchers from the University of Cambridge have unravelled one of the mysteries of electromagnetism, which could enable the design of antennas small enough to be integrated into an electronic chip. These ultra-small antennas - the so-called 'last frontier' of semiconductor design - would be a massive leap forward for wireless communications.

Duke University research advances testing of 3D integrated circuits for cost-effective development of electronics

Tue, 4 Apr 2015
Duke University researchers are working to advance the tools and methodologies used to test 3D integrated circuits (ICs), which promise to help ensure the ongoing development of higher performance, lower power semiconductor chips.

Applied Materials announces new photomask etch system

Mon, 4 Apr 2015
Applied Materials today announced the Applied Centura Tetra Z Photomask Etch system for etching next-generation optical lithographic photomasks needed by the industry to continue multiple patterning scaling to the 10nm node and beyond.

MagnaChip to offer diversified products for Internet of Things applications

Mon, 4 Apr 2015
MagnaChip Semiconductor Corporation, a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products announced today that it has kicked-off an Internet of Things (IoT) task force and will offer diversified products with ultra-low power technology in anticipation of the fast growing IoT market.

Synopsys' modeling of 10nm parasitic variation effects ratified by open-source standards board

Tue, 4 Apr 2015
Synopsys, Inc. today announced new extensions to its open-source Interconnect Technology Format (ITF) which enable modeling of complex device and interconnect parasitic effects at the advanced 10-nanometer (nm) process node.

From metal to insulator and back again

Thu, 4 Apr 2015
New work from Carnegie's Russell Hemley and Ivan Naumov hones in on the physics underlying the recently discovered fact that some metals stop being metallic under pressure.

Surface matters: Huge reduction of heat conduction observed in flat silicon channels

Thu, 4 Apr 2015
A paper published in ACS Nano describes how the nanometre-scale topology and the chemical composition of the surface control the thermal conductivity of ultrathin silicon membranes.

Two-dimensional semiconductor comes clean

Tue, 4 Apr 2015
Researchers at Columbia Engineering, Harvard, Cornell, University of Minnesota, Yonsei University in Korea, Danish Technical University, and the Japanese National Institute of Materials Science have shown that the performance of another 2D material--molybdenum disulfide (MoS2)--can be similarly improved by BN-encapsulation.

Georgia Tech research offers novel cellular sensing platform for expanded use of semiconductor in biotech applications

Thu, 4 Apr 2015
Researchers from the Georgia Institute of Technology have developed a novel cellular sensing platform that promises to expand the use of semiconductor technology in the development of next-generation bioscience and biotech applications.

Dow's SOLDERON tin-silver plating chemistry wins prestigious Bronze Edison Award

Fri, 5 May 2015
Dow Electronic Materials, a business unit of The Dow Chemical Company, today announced that its SOLDERON BP TS 6000 Tin-Silver Plating Chemistry was honored as a Bronze 2015 Edison Award winner in the Material Science: Manufacturing category.

Improving organic transistors that drive flexible and conformable electronics

Tue, 5 May 2015
A revolution is coming in flexible electronic technologies as cheaper, more flexible, organic transistors come on the scene to replace expensive, rigid, silicone-based semiconductors, but not enough is known about how bending in these new thin-film electronic devices will affect their performance.

Defects in atomically thin semiconductor emit single photons

Tue, 5 May 2015
Researchers at the University of Rochester have shown that defects on an atomically thin semiconductor can produce light-emitting quantum dots.

"Microcombing" creates stronger, more conductive carbon nanotube films

Tue, 5 May 2015
Researchers from North Carolina State University and China's Suzhou Institute of Nano-Science and Nano-Biotics have developed an inexpensive technique called "microcombing" to align carbon nanotubes.

Co-design of chips, packages and boards

Wed, 5 May 2015
A new product from Mentor Graphics called Xpedition® Package Integrator provides a new methodology and platform in addition to a new suite of EDA tools.

New JEOL e-beam lithography system to enhance Quantum NanoFab capabilities

Wed, 5 May 2015
A JEOL e-beam lithography system will soon be a new resource for quantum information science researchers that utilize the cutting-edge facilities at the University of Waterloo Quantum NanoFab in Waterloo, Ontario.

Visualizing formation in BEOL

Thu, 5 May 2015
New tests show in real-time that cracks can run on top of and through metal layers.

Channeling valleytronics in graphene

Thu, 5 May 2015
To the list of potential applications of graphene - a two-dimensional semiconductor of pure carbon that is stronger and much faster than silicon - we can now add valleytronics.

High-performance 3-D microbattery suitable for large-scale on-chip integration

Tue, 5 May 2015
By combining 3D holographic lithography and 2D photolithography, researchers from the University of Illinois at Urbana-Champaign have demonstrated a high-performance 3D microbattery suitable for large-scale on-chip integration with microelectronic devices.

Freescale speeds the creation of sensor applications for a secure IoT

Thu, 5 May 2015
Freescale Semiconductor today introduced its Intelligent Sensing Framework (ISF) 2.1, which now includes integration with Freescale’s Processor Expert tool to help create, configure, and generate embedded sensor-based applications for Freescale microcontrollers (MCUs).

Random nanowire configurations increase conductivity over heavily ordered configurations

Fri, 5 May 2015
Researchers at Lehigh University have identified for the first time that a performance gain in the electrical conductivity of random metal nanowire networks can be achieved by slightly restricting nanowire orientation.

Applied Materials' breakthrough patterning hard mask enables copper interconnect scaling

Tue, 5 May 2015
Applied Materials, Inc. today announced its Applied Endura Cirrus HTX PVD system with breakthrough technology for patterning copper interconnects at 10nm and beyond.

imec and Lam Research develop novel metallization method

Tue, 5 May 2015
During the IEEE IITC conference in Grenoble, the nanoelectronics research center imec and Lam Research Corporation today presented a novel bottom-up prefill technique for vias and contacts.

Computing at the speed of light

Tue, 5 May 2015
University of Utah engineers have taken a step forward in creating the next generation of computers and mobile devices capable of speeds millions of times faster than current machines.

Freescale introduces its first GaN RF power transistor for cellular base stations

Tue, 5 May 2015
Freescale Semiconductor today introduced its first gallium nitride (GaN) RF power transistor for cellular base stations.

Advantest launches its first integrated test solution for optical transceivers

Tue, 5 May 2015
Semiconductor test equipment supplier Advantest Corporation has introduced its new 28G OPM (28-gigabit Optical Port Module), the company's first solution designed specifically for testing optical transceivers.

GLOBALFOUNDRIES offers new low-power 28nm solution for high-performance mobile and IoT applications

Wed, 5 May 2015
Technology is the first in the industry to provide design enablement support optimized to meet low power requirements of RF SoCs.

imec and Tokyo Electron demonstrate electrical advantages of direct Cu etch scheme for advanced interconnects

Wed, 5 May 2015
Today, at the IEEE IITC conference, nano-electronics research center imec and Tokyo Electron Limited (TEL) presented a direct Cu etch scheme for patterning Cu interconnects.

SRC awarded NIST funding to develop Semiconductor Synthetic Biology Consortium

Thu, 5 May 2015
Semiconductor Research Corporation announced that it has received funding from the National Institute of Standards and Technology (NIST) Advanced Manufacturing Technology (AMTech) program to create a Semiconductor Synthetic Biology (SemiSynBio) consortium whose mission is to develop a SemiSynBio roadmap.

Advantest develops semiconductor circuit analysis terahertz technology

Thu, 5 May 2015
Semiconductor test equipment supplier Advantest Corporation announced today that it has developed a technology utilizing short-pulse terahertz waves for analysis of electrical circuits.

Dow Corning introduces next-generation thermal interface material

Tue, 5 May 2015
Dow Corning, a developer of silicones, silicon-based technology and innovation, today unveiled new Dow Corning TC-3040 Thermally Conductive Gel, a next-generation thermal interface material.

Infinitesima Ltd announces major RPM design win with Zeiss

Tue, 5 May 2015
Infinitesima announced today that its groundbreaking probe microscope has been integrated into the ZEISS MeRiT neXT photomask repair tool.

GaN Systems power transistors are 50% smaller

Tue, 5 May 2015
GaN Systems, a developer of gallium nitride power switching semiconductors, today confirmed the world’s smallest 650V, 15A gallium nitride transistor.

UMC unveils UMC Auto Platform to enable automotive IC designs

Tue, 5 May 2015
United Microelectronics Corporation, a global semiconductor foundry, today unveiled its UMC Auto technology platform to target IC companies designing chips for automotive applications.

Collaboration could lead to biodegradable computer chips

Fri, 5 May 2015
Portable electronics - typically made of non-renewable, non-biodegradable and potentially toxic materials - are discarded at an alarming rate in consumers' pursuit of the next best electronic gadget.

A major advance in mastering the extraordinary properties of an emerging semiconductor

Fri, 6 Jun 2015
Black phosphorus reveals its secrets thanks to a scientific breakthrough made by a team from Universite de Montreal, Polytechnique Montreal and CNRS in France.

Is it time to switch to OASIS.MASK?

Thu, 6 Jun 2015
A summary of OASIS standard advantages and weaknesses is presented, based on six years of experience with customer databases.

A novel characterization technique unveils the 3D structure of conductive filaments in resistive switching memories

Fri, 6 Jun 2015
Imec researchers have developed a novel technique – termed conductive atomic force microscopy tomography (or scalpel C-AFM) – that enables a three-dimensional characterization of emerging logic and memory devices.

Futuristic components on silicon chips, fabricated successfully

Mon, 6 Jun 2015
IBM researchers develop a technique for integrating 'III-V' materials onto silicon wafers, a breakthrough that may allow an extension to Moore's Law.

imec presents large area industrial crystalline silicon n-PERT solar cell with record 22.5% efficiency

Wed, 6 Jun 2015
Nano-electronics research center imec announced today at Intersolar Europe, a new efficiency record for its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Cz-Si) solar cell, now reaching 22.5 percent (calibrated at ISE CalLab).

Slip sliding away: Graphene and diamonds prove a slippery combination

Wed, 6 Jun 2015
Scientists at the U.S. Department of Energy's Argonne National Laboratory have found a way to use tiny diamonds and graphene to give friction the slip, creating a new material combination that demonstrates the rare phenomenon of "superlubricity."

Researchers grind nanotubes to get nanoribbons

Mon, 6 Jun 2015
A simple way to turn carbon nanotubes into valuable graphene nanoribbons may be to grind them, according to research led by Rice University.

Researchers create transparent, stretchable conductors using nano-accordion structure

Thu, 6 Jun 2015
Researchers from North Carolina State University have created stretchable, transparent conductors that work because of the structures' "nano-accordion" design. The conductors could be used in a wide variety of applications, such as flexible electronics, stretchable displays or wearable sensors.

A new look at surface chemistry

Thu, 6 Jun 2015
For the first time in the long and vaunted history of scanning electron microscopy, the unique atomic structure at the surface of a material has been resolved.

First solar cell made of highly ordered molecular frameworks

Fri, 6 Jun 2015
"We have opened the door to a new room," says Professor Christof Wöll, Director of KIT Institute of Functional Interfaces (IFG).

Freescale takes its next generation QorIQ multicore platform to 16nm FinFET technology

Wed, 6 Jun 2015
Freescale Semiconductor has disclosed initial details regarding the next generation of its successful QorIQ multicore processor portfolio, today announcing it will drive innovation for the secure Internet of Tomorrow (IoT) on highly advanced 16nm FinFET process technology.

Stanford researchers stretch a thin crystal to get better solar cells

Thu, 6 Jun 2015
Crystalline semiconductors like silicon can catch photons and convert their energy into electron flows. New research shows a little stretching could give one of silicon's lesser-known cousins its own place in the sun.

“What’s next?” ─ Advances in technology at SEMICON West 2015

Thu, 6 Jun 2015
The latest manufacturing, materials and production developments in semiconductor and related technologies will be featured at SEMICON West 2015 on July 14-16 at Moscone Center in San Francisco, Calif.

The peaks and valleys of silicon

Mon, 6 Jun 2015
When the new iPhone came out, customers complained that it could be bent -- but what if you could roll up your too big 6 Plus to actually fit in your pocket? That technology might be available sooner than you think, based on the work of USC Viterbi engineers.

Making new materials with micro-explosions

Mon, 6 Jun 2015
Scientists have made exotic new materials by creating laser-induced micro-explosions in silicon, the common computer chip material.

Opening a new route to photonics

Mon, 6 Jun 2015
A new route to ultrahigh density, ultracompact integrated photonic circuitry has been discovered by researchers with the Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley.

New method can make cheaper solar energy storage

Wed, 7 Jul 2015
EPFL scientists have now developed a simple, unconventional method to fabricate high-quality, efficient solar panels for direct solar hydrogen production with low cost.

Graphene flexes its electronic muscles

Wed, 7 Jul 2015
Flexing graphene may be the most basic way to control its electrical properties, according to calculations by theoretical physicists at Rice University and in Russia.

EV Group ramps nanoimprint lithography into high-volume manufacturing with HERCULES NIL Track System

Tue, 7 Jul 2015
EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today unveiled the HERCULES NIL—a fully integrated track system that combines cleaning, resist coating and baking pre-processing steps with EVG's SmartNIL large-area nanoimprint lithography (NIL) process in a single platform.

Could black phosphorus be the next silicon?

Tue, 7 Jul 2015
New material could make it possible to pack more transistors on a chip, research suggests.

Genmark Automation launches CODEX Stocker

Mon, 7 Jul 2015
Genmark Automation, a developer of tool and factory automation solutions for the semiconductor and related industries, today announced the launch of its new CODEX Stocker.

Graphene gets competition

Thu, 7 Jul 2015
Graphene, the only one atom thick carbon network, achieved overnight fame with the 2010 Nobel Prize. But now comes competition: Such layers can also be formed by black phosphorous.

Applied Materials introduces high-performance ALD technology for the 3D era

Mon, 7 Jul 2015
Applied Materials, Inc. today unveiled the Applied Olympia ALD system, featuring a unique, modular architecture that delivers high-performance ALD technology to manufacturers of leading-edge 3D memory and logic chips.

Imec and Panasonic demonstrate breakthrough RRAM cell

Mon, 7 Jul 2015
Imec and Panasonic Corp. announced today that they have fabricated a 40nm TaOx-based RRAM (resistive RAM) technology with precise filament positioning and high thermal stability.

Applied Materials' new etch system provides atomic-level precision

Mon, 7 Jul 2015
Applied Materials, Inc. today announced a next-generation etch tool, the Applied Centris Sym3 Etch system, featuring an entirely new chamber for atomic-level precision manufacturing.

ECAE improves sputtering target performance

Tue, 7 Jul 2015
Because it can achieve extreme deformation, Equal Channel Angular Extrusion (ECAE) can deliver submicron, high strength and uniform microstructures. The resulting improvements in strength allow for monolithic targets with a longer target life of 20-100%.

A new sensor from Golden Valley-based CyberOptics will advance digital gadgets

Wed, 7 Jul 2015
CyberOptics’ latest product ultimately will make digital gadgets better, cheaper.

Managing hazardous process exhaust in high volume manufacturing

Wed, 7 Jul 2015
“Let no element on the periodic table go un-used!” That may well be the rallying cry of the semiconductor industry moving forward.

New materials require new approaches

Wed, 7 Jul 2015
Continued advances in the semiconductor will increasingly be enabled by materials technology, versus the scaling that has been commonplace over the last 50 years as defined by Moore’s Law.

An easy, scalable and direct method for synthesizing graphene in silicon microelectronics

Tue, 7 Jul 2015
In the last decade, graphene has been intensively studied for its unique optical, mechanical, electrical and structural properties.

ORNL researchers make scalable arrays of 'building blocks' for ultrathin electronics

Wed, 7 Jul 2015
Researchers at the Department of Energy's Oak Ridge National Laboratory have combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions in arbitrary patterns within a single, nanometer-thick semiconductor crystal.

More efficient process to produce graphene developed by Ben-Gurion University researchers

Thu, 7 Jul 2015
Ben-Gurion University of the Negev (BGU) and University of Western Australia researchers have developed a new process to develop few-layer graphene for use in energy storage and other material applications that is faster, potentially scalable and surmounts some of the current graphene production limitations.

Reshaping the solar spectrum to turn light to electricity

Tue, 7 Jul 2015
A team of chemists at the University of California, Riverside found an ingenious way to make solar energy conversion more efficient.

Penn researchers discover new chiral property of silicon, with photonic applications

Fri, 7 Jul 2015
By encoding information in photons via their spin, "photonic" computers could be orders of magnitude faster and efficient than their current-day counterparts. Likewise, encoding information in the spin of electrons, rather than just their quantity, could make "spintronic" computers with similar advantages.

Rice University finding could lead to cheap, efficient metal-based solar cells

Mon, 7 Jul 2015
New research from Rice University could make it easier for engineers to harness the power of light-capturing nanomaterials to boost the efficiency and reduce the costs of photovoltaic solar cells.

Meet the high-performance single-molecule diode

Wed, 7 Jul 2015
A team of researchers from Berkeley Lab and Columbia University has passed a major milestone in molecular electronics with the creation of the world's highest-performance single-molecule diode.

Sol-gel capacitor dielectric offers record-high energy storage

Thu, 7 Jul 2015
Using a hybrid silica sol-gel material and self-assembled monolayers of a common fatty acid, researchers have developed a new capacitor dielectric material that provides an electrical energy storage capacity rivaling certain batteries, with both a high energy density and high power density.

SEMICON West: The road forward is 3DIC

Fri, 7 Jul 2015
SEMICON West 2015 had a strong and rich undercurrent – the roadmap forward is most certainly 3DIC.

Better together: Graphene-nanotube hybrid switches

Mon, 8 Aug 2015
Yoke Khin Yap, a professor of physics at Michigan Technological University, has worked with a research team that created these digital switches by combining graphene and boron nitride nanotubes.

Toshiba develops world’s first 256Gb, 48-layer BiCS FLASH

Tue, 8 Aug 2015
Toshiba America Electronic Components, Inc. (TAEC) today unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory.

Rice U. discovery may boost memory technology

Tue, 8 Aug 2015
Scientists at Rice University have created a solid-state memory technology that allows for high-density storage with a minimum incidence of computer errors.

Imec pushes the boundaries of GaN technology

Wed, 8 Aug 2015
Nano-electronics research center imec announced today that it is extending its Gallium Nitride-on-Silicon (GaN-on-Si) R&D program, and is now offering joint research on GaN-on-Si 200mm epitaxy and enhancement mode device technology.

Black phosphorus surges ahead of graphene

Fri, 8 Aug 2015
A Korean team of scientists tune BP's band gap to form a superior conductor, allowing for the application to be mass produced for electronic and optoelectronics devices

Discovery in growing graphene nanoribbons could enable faster, more efficient electronics

Fri, 8 Aug 2015
University of Wisconsin-Madison engineers have discovered a way to grow graphene nanoribbons with desirable semiconducting properties directly on a conventional germanium semiconductor wafer.

Surprising discoveries about 2-D molybdenum disulfide

Mon, 8 Aug 2015
Scientists with the U.S. Department of Energy (DOE)'s Lawrence Berkeley National Laboratory (Berkeley Lab) have used a unique nano-optical probe to study the effects of illumination on two-dimensional semiconductors at the molecular level.

Drexel engineers 'sandwich' atomic layers to make new materials for energy storage

Mon, 8 Aug 2015
A team from Drexel's Department of Materials Science and Engineering created the material-making method, that can sandwich 2-D sheets of elements that otherwise couldn't be combined in a stable way.

Manchester team reveal new, stable 2-D materials

Thu, 8 Aug 2015
Dozens of new 2-dimensional materials similar to graphene are now available, thanks to research from University of Manchester scientists.

Peregrine Semiconductor announces next chapter in intelligent integration

Thu, 8 Aug 2015
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, announces the next chapter in intelligent integration -- integrated phase and amplitude control at microwave frequencies.

GaN nanoelectronics-transistor blocking voltage exceeds 1kV

Mon, 8 Aug 2015
Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV.

Another milestone in hybrid artificial photosynthesis

Wed, 8 Aug 2015
Berkeley Lab researchers use solar energy and renewable hydrogen to produce methane.

Successful boron-doping of graphene nanoribbon

Thu, 8 Aug 2015
Physicists at the University of Basel succeed in synthesizing boron-doped graphene nanoribbons and characterizing their structural, electronic and chemical properties.

University of Colorado and SRC research accelerates microscopic imaging for next-generation nanoelectronics

Thu, 8 Aug 2015
University of Colorado researchers sponsored by Semiconductor Research Corporation (SRC), a university-research consortium for semiconductor technologies, have developed new microscopic imaging techniques to help advance next-generation nanotechnology in applications ranging from data storage to medicine.

CyberOptics demonstrates new WaferSense and ReticleSense Auto Multi Sensors

Wed, 9 Sep 2015
CyberOptics Corporation, a global developer and manufacturer of high precision 3D sensing technology solutions, will demonstrate the first wireless sensor to combine leveling, vibration and Relative humidity (RH) measurement in an all-in-one device at SEMICON Taiwan in Taipei, September 2-4, 2015.

Made from solar concentrate

Wed, 9 Sep 2015
Solar cell from Berkeley Lab/University of Illinois absorbs high-energy light at 30-fold higher concentration than conventional cells.

Researchers in Basel develop ideal single-photon source

Tue, 9 Sep 2015
With the help of a semiconductor quantum dot, physicists at the University of Basel have developed a new type of light source that emits single photons. For the first time, the researchers have managed to create a stream of identical photons.

MACOM announces milestone in the commercialization of GaN on Silicon technology

Tue, 9 Sep 2015
M/A-COM Technology Solutions Inc., a supplier of high-performance analog, RF, microwave, millimeterwave and photonic semiconductor products, announced that it has shipped more than one million GaN-on-Silicon (GaN on Si) RF power devices to date to customers for use in communications, military and other RF applications.

Realizing carbon nanotube integrated circuits

Wed, 9 Sep 2015
Encapsulation layers keep carbon nanotube transistors stable in open air.

Overlooked resistance may inflate estimates of organic-semiconductor performance

Thu, 3 Mar 2016
If unaccounted for, 'non-ideal' behaviors can inflate estimates of charge-carrier mobility.

OEM Group Announces New Cintillio-S (TM) Automated Batch Wet Chemical Processing System

Mon, 9 Sep 2015
Global semiconductor capital equipment manufacturer OEM Group announced today that it has launched its new Cintillio-S (TM) automated batch wet chemical processing system.

Professors from UT Austin and Carnegie Mellon honored for excellence in semiconductor technology and design research

Wed, 9 Sep 2015
The Semiconductor Industry Association, in consultation with Semiconductor Research Corporation, today presented its University Research Award to professors from the University of Texas at Austin and Carnegie Mellon University in recognition of their outstanding contributions to semiconductor research.

SUNY Poly announces joint development agreement with INFICON

Mon, 9 Sep 2015
The collaboration is expected to advance semiconductor manufacturing processes and lead to the creation of 50 jobs at SUNY Poly statewide facilities.

New software update for parametric test system reduces test times by 25 percent

Thu, 9 Sep 2015
Tektronix, Inc. announced the release of a major system software update for the Keithley S530 Parametric Test System that can reduce measurement speed by as much as 25 percent.

X-FAB sets benchmark for low-noise CMOS

Fri, 9 Sep 2015
Enhanced XH035 and XH018 CMOS transistors deliver industry-leading performance for highly noise-sensitive applications.

A different type of 2D semiconductor

Tue, 9 Sep 2015
Berkeley Lab Researchers produce the first ultrathin sheets of perovskite hybrids.

Novati Technologies launches advanced integrated sensor platform

Wed, 9 Sep 2015
Novati Technologies Inc. announced the availability of an advanced Integrated Sensor Platform, placing a wide variety of sensors onto multi-layer stacks of wafers in order to consume less power and perform significantly faster while reducing overall footprint.

First circularly polarized light detector on a silicon chip

Thu, 10 Oct 2015
Invention of the first integrated circularly polarized light detector on a silicon chip opens the door for development of small, portable sensors that could expand the use of polarized light for many applications.

Yamaichi Electronics 0.35mm pitch test contactor for semiconductor evaluation

Fri, 10 Oct 2015
Yamaichi Electronics presents Test Contactors for lab and reliability applications and ultra fine pitch semiconductor devices.

SDK to Offer SiC Epitaxial Wafers with very low defect density

Mon, 10 Oct 2015
Showa Denko has developed a new grade of silicon carbide (SiC) epitaxial wafers for power devices with very low defect density.

Altatech adds new high-speed inspection system dedicated to ultra-thin substrates for 3D applications

Mon, 10 Oct 2015
Altatech announced the expansion of its Eclipse series with a new, high-speed inspection system dedicated to ultra-thin, transparent and bonded substrates inspection for 3D applications in power, MEMS, and mobile technologies.

Entegris introduces SmartStack 300 mm contactless horizontal wafer shipper

Tue, 10 Oct 2015
Entegris, Inc. has expanded its wafer shipper family of products with the SmartStack (R) 300 mm Contactless Horizontal Wafer Shipper.

DCG Systems introduces Meridian M for static optical failure analysis

Tue, 10 Oct 2015
DCG Systems announced the release of the Meridian M (TM) system for isolation of routine and challenging electrical faults at the wafer level.

Vanadium dioxide leads to a better transistor

Mon, 10 Oct 2015
Penn State materials scientists have discovered a way to give the transistor a boost by incorporating vanadium oxide.

Scientists paint quantum electronics with beams of light

Mon, 10 Oct 2015
Scientists from the University of Chicago and Penn State University accidentally discovered a new way of using light to draw and erase quantum-mechanical circuits in a unique class of materials called topological insulators.

Successful industrialization of high-density 3D integrated silicon capacitors for ultra-miniaturized electronic components

Thu, 10 Oct 2015
Two years after the launch of the PICS project , three European SMEs, IPDiA, Picosun, and SENTECH Instruments along with CEA-Leti and Fraunhofer IPMS-CNT announce the major technological results achieved.

Light goes infinitely fast with new on-chip material

Fri, 10 Oct 2015
Researchers at the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) have designed the first on-chip metamaterial with a refractive index of zero.

Berkeley Lab researchers demonstrate atomically thin excitonic laser

Fri, 10 Oct 2015
An important step towards next-generation ultra-compact photonic and optoelectronic devices has been taken with the realization of a two-dimensional excitonic laser.

Manipulating wrinkles could lead to graphene semiconductors

Mon, 10 Oct 2015
RIKEN scientists have discovered that wrinkles in graphene can restrict the motion of electrons to one dimension, forming a junction-like structure that changes from zero-gap conductor to semiconductor back to zero-gap conductor.

mCube unveils the world's smallest 1x1mm accelerometer

Tue, 10 Oct 2015
mCube announced the industry’s first 3-axis accelerometer which is less than a cubic millimeter in total size.

DCG Systems addresses localization of electrical shorts with EBIRCH technology

Tue, 11 Nov 2015
DCG Systems announced the release of EBIRCH, a technology for localizing shorts and other low-resistance faults that may reside in the interconnect structures or the polysilicon base layer of integrated circuits.

New Helios G4 Series DualBeam from FEI sets new standards

Tue, 11 Nov 2015
FEI announced the Helios G4 DualBeam series, which offers the highest throughput ultra-thin TEM lamella preparation for leading-edge semiconductor manufacturing and failure analysis applications.

Ultratech introduces superfast 4G+ low-cost in-line inspection system for patterned wafers

Wed, 11 Nov 2015
Ultratech, Inc. today introduced the Superfast 4G+ in-line, 3D topography inspection system.

Transistor-level challenges get squeaky wheel results

Thu, 11 Nov 2015
The squeaky wheel gets the grease, or so it seems in the semiconductor industry, as the high level of the design process seems to get the most attention. Meanwhile, the transistor level appears to have been largely forgotten.

A new slant on semiconductor characterization

Thu, 11 Nov 2015
Method analyzes non-uniform conductors with a magnetic field.

Security by design

Fri, 11 Nov 2015
The advent of Internet-connected devices, the so-called Internet of Things (IoT), offers myriad opportunities and significant risks. It is our collective responsibility, as an industry, to secure the transport and storage of the data. Failing to properly secure the data risks turning the digital threat into a physical threat.

Micron introduces persistent memory tech that combines DRAM performance with NAND flash reliability

Fri, 11 Nov 2015
Micron Technology, Inc. this week announced the production of 8GB DDR4 NVDIMM, the company's first commercially available solution in the persistent memory category.

Taking 2D materials from lab to fab, and to technology

Tue, 11 Nov 2015
Due to their exciting properties, 2D crystals like graphene and transition metal dichalcogenides promise to become the material of the future.

Stacking instead of mixing

Wed, 11 Nov 2015
A team from Jülich and Aachen has now found a way to control the desired conducting properties of this type of material more precisely and reliably than ever before.

Highlights from Day 2 of IDTechEx Printed Electronics USA 2015

Mon, 11 Nov 2015
IDTechEx Printed Electronics USA 2015, held in Santa Clara, CA Nov 18-19, is one mega conference with 8 co-located tracks ranging from sensor technology & wearables to IoT, energy harvesting & storage to electric vehicles, 3D printing and graphene.

Quantum spin could create unstoppable, one-dimensional electron waves

Mon, 11 Nov 2015
A pair of scientists from the U.S. Department of Energy's Brookhaven National Laboratory and Ludwig Maximilian University in Munich have proposed the first solution to subatomic stoppage: a novel way to create a more robust electron wave by binding together the electron's direction of movement and its spin.

Strange quantum phenomenon achieved at room temperature in semiconductor wafers

Mon, 11 Nov 2015
Today, entanglement is accepted as a fact of nature and is actively being explored as a resource for future technologies including quantum computers, quantum communication networks, and high-precision quantum sensors.

Tandem solar cells are simply better

Tue, 11 Nov 2015
What is true for double-blade razors is also true for solar cells: two work steps are more thorough than one.

Cambridge CMOS Sensors wins again at NMI awards

Tue, 11 Nov 2015
Cambridge CMOS Sensors (CCS), a semiconductor company with gas sensor solutions to monitor the local environment, today announced that it has been crowned winner of the Product of the Year category at this year's National Microelectronics Institute (NMI) Awards, held at the Grange Tower Bridge Hotel in London.

Doping powers new thermoelectric material

Mon, 11 Nov 2015
In the production of power, nearly two-thirds of energy input from fossil fuels is lost as waste heat. Industry is hungry for materials that can convert this heat to useful electricity, but a good thermoelectric material is hard to find.

Stanford technology makes metal wires on solar cells nearly invisible to light

Mon, 11 Nov 2015
Stanford University scientists have discovered how to hide the reflective upper contact and funnel light directly to the semiconductor below.

IU chemists craft molecule that self-assembles into flower-shaped crystalline patterns

Tue, 12 Dec 2015
The National Science Foundation has awarded $1.2 million to three research groups at Indiana University to advance research on self-assembling molecules and computer-aided design software required to create the next generation of solar cells, circuits, sensors and other technology.

Researchers find new phase of carbon, create diamond at room temp

Tue, 12 Dec 2015
Researchers from North Carolina State University have discovered a new phase of solid carbon, called Q-carbon, which is distinct from the known phases of graphite and diamond.

ORNL process could be white lightning to the electronics industry

Wed, 12 Dec 2015
A new era of electronics and even quantum devices could be ushered in with the fabrication of a virtually perfect single layer of "white graphene," according to researchers at the Department of Energy's Oak Ridge National Laboratory.

Quantum computer made of standard semiconductor materials

Wed, 12 Dec 2015
Physicists at the Technical University of Munich, the Los Alamos National Laboratory and Stanford University (USA) have tracked down semiconductor nanostructure mechanisms that can result in the loss of stored information - and halted the amnesia using an external magnetic field.

Measuring nanoscale features with fractions of light

Fri, 12 Dec 2015
National Institute of Standards and Technology (NIST) researchers are seeing the light, but in an altogether different way. And how they are doing it just might be the semiconductor industry's ticket for extending its use of optical microscopes to measure computer chip features that are approaching 10 nanometers, tiny fractions of the wavelength of light.

Leti develops local-strain techniques in FD-SOI fabrication to improve next-generation performance

Tue, 12 Dec 2015
CEA-Leti today announced it has developed two techniques to induce local strain in FD-SOI processes for next-generation FD-SOI circuits that will produce more speed at the same, or lower, power consumption, and improve performance.

Imec improves performance and reliability of deeply-scaled CMOS logic devices

Wed, 12 Dec 2015
At this week’s IEEE International Electron Devices Meeting 2015, nano-electronics research center imec presented breakthrough results to increase performance and improve reliability of deeply scaled silicon CMOS logic devices.

Variation in build-up substrate layer thicknesses and its impact on FCBGA BLR performance

Tue, 12 Dec 2015
Subtleties in thicknesses between the alternating Cu metal and dielectric layers within a build-up substrate can impact BLR performance.

Feed-forward overlay control in lithography processes using CGS

Wed, 12 Dec 2015
Feed-forward can be applied for controlling overlay error by using Coherent Gradient Sensing (CGS) data to reveal correlations between displacement variation and overlay variation.

When front-end-of-line and back-end-of-line reliability meet

Wed, 12 Dec 2015
Due to the further scaling and increasing complexity of transistors, the boundaries between back-end-of-line and front-end-of-line reliability research are gradually fading. Imec’s team leaders Kristof Croes and Dimitri Linten give their vision on the future of reliability research.

Imec advances drive current in vertical 3D NAND memory devices

Wed, 12 Dec 2015
At this week’s IEEE IEDM conference, nano-electronics research center imec showed for the first time the integration of high mobility InGaAs as a channel material for 3D vertical NAND memory devices formed in the plug (holes) with the diameter down to 45nm.

Imec boosts performance of beyond-silicon devices

Thu, 12 Dec 2015
At this week’s IEEE IEDM conference, nano-electronics research center imec demonstrates record enhancement of novel InGaAs Gate-All-Around (GAA) channel devices integrated on 300mm Silicon and explores emerging tunnel devices based on optimization of the same III-V compound semiconductor.

Imec advances 200mm GaN-on-Si tech closer to manufacturing

Mon, 12 Dec 2015
At last week’s IEEE International Electron Devices Meeting 2015, nano-electronics research center imec presented three novel aluminum gallium nitride (AlGaN)/ gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs.

Applied Materials' Chorng-Ping Chang named 2016 IEEE Fellow

Tue, 12 Dec 2015
Applied Materials, Inc. today announced that Dr. Chorng-Ping Chang, who leads the company's strategic external research with universities and industry consortia, has been named a 2016 IEEE Fellow.

Building blocks for GaN power switches

Tue, 12 Dec 2015
A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with applications spanning nearly all electronics products and electricity distribution infrastructures.

Time-resolved measurement of the anomalous velocity

Wed, 12 Dec 2015
Movement of charge carriers perpendicular to an electric driving field in a solid state system detected for the first time with sub-picosecond time resolution.

Koyanagi and Ramm win 3DIC Pioneering Award

Mon, 12 Dec 2015
At the 12th annual 3D ASIP [Architectures for Semiconductor Interconnect and Packaging] Conference, sponsored by RTI Int, in Redwood City CA last week, Professor Mitsumasa Koyanagi of Tohoku University and Dr. Peter Ramm of Fraunhofer EMFT were the conference's first recipients of the “3DIC Pioneer Award”.

New device uses carbon nanotubes to snag molecules

Tue, 12 Dec 2015
Engineers at MIT have devised a new technique for trapping hard-to-detect molecules, using forests of carbon nanotubes.

Choreographing the dance of electrons

Mon, 1 Jan 2016
NUS scientists have discovered how to manipulate electrons in thin semiconductors by encapsulating them in atomically thin materials and changing the electric field.

IEEE Photonics Society announces Call for Papers for fifth annual Optical Interconnects Conference

Fri, 1 Jan 2016
Paper submission deadline is January 24, 2016.

UW scientists create ultrathin semiconductor heterostructures for new technologies

Fri, 2 Feb 2016
University of Washington scientists have successfully combined two different ultra thin semiconductors to make a new two-dimensional heterostructure with potential uses in clean energy and optically-active electronics.

Wide Band Gap technologies: An opportunity to increase power devices performance

Fri, 1 Jan 2016
When people think about Wide Band Gap (WBG) materials for power electronics applications, they usually think of GaN or SiC. However, there are materials with an even larger band gap which can further increase power device performance.

Collaboration is the centerpiece to push the limits of lithography

Mon, 1 Jan 2016
The continuation of Moore’s Law requires a combination of both physical and functional scaling, where our main challenge in lithography is to continue pushing the physical scaling limits in a controlled and cost-effective way.

Flash, STT-MRAM and resistive RAM: They all come with different challenges

Mon, 1 Jan 2016
Research in memory is really exciting these days: in parallel you have the scaling of classical memories (SRAM, DRAM, Flash) and the emergence of new memories capable of enabling new applications or even new system hierarchies. At imec, we mostly focus on three concepts which all come with different challenges.

Stanford researchers advance area selective ALD to develop more energy efficient electronics

Tue, 1 Jan 2016
Stanford University researchers sponsored by Semiconductor Research Corporation (SRC) have developed a new area selective atomic layer deposition (ALD) process that promises to accelerate the manufacturing of higher performing, more energy efficient semiconductors.

Annihilating nanoscale defects

Thu, 1 Jan 2016
Researchers at the University of Chicago and the U.S. Department of Energy's Argonne National Laboratory, led by Juan de Pablo and Paul Nealey, may have found a way for the semiconductor industry to hit miniaturization targets on time and without defects.

Cypress supports wafer sales on leading F-RAM and nvSRAM Portfolio

Thu, 1 Jan 2016
Cypress Semiconductor Corp., today announced the addition of wafer products to its industry-leading nonvolatile random access memory (NVRAM) portfolio.

Cornell-led team creates gallium nitride power diode

Fri, 1 Jan 2016
Making tiny switches do enormous jobs in a more efficient way than current technology allows is one of the goals of a research team led by Cornell engineering professor Huili (Grace) Xing.

IBS report electric transport across molybdenum disulfide grain boundaries

Wed, 1 Jan 2016
The Center for Integrated Nanostructure Physics (CINAP) within IBS has reported results correlating the flake merging angle with grain boundary (GBs) properties, and proven that increasing the merging angle of GBs drastically improves the flow of electrons.

A step towards keeping up with Moore's Law

Thu, 1 Jan 2016
POSTECH researchers develop a novel and efficient fabrication technology for cross-shaped memristor.

Breakthrough enables ultra-fast transport of electrical charges in polymers

Thu, 1 Jan 2016
A research team at Umeå University in Sweden has showed, for the first time, that a very efficient vertical charge transport in semiconducting polymers is possible by controlled chain and crystallite orientation.

Helium reduction at pre-metal sub-atmospheric CVD

Mon, 2 Feb 2016
A novel SACVD PMD invention sets the benchmark for helium reduction efforts by achieving four key objectives: cost reduction, quality, process robustness and productivity.

Silicon chip with integrated laser: Light from a nanowire

Thu, 2 Feb 2016
Physicists at the Technical University of Munich (TUM) have developed a nanolaser, a thousand times thinner than a human hair. Thanks to an ingenious process, the nanowire lasers grow right on a silicon chip, making it possible to produce high-performance photonic components cost-effectively. This will pave the way for fast and efficient data processing with light in the future.

New technique for turning sunlight into hydrogen

Tue, 2 Feb 2016
A team of Korean researchers, affiliated with UNIST has recently pioneered in developing a new type of multilayered (Au NPs/TiO2/Au) photoelectrode that boosts the ability of solar water-splitting to produce hydrogen.

Imec, Inpria and TEL demonstrate integrated fab process for metal-oxide EUV photoresist

Tue, 2 Feb 2016
imec, Inpria and TEL will present the first integrated patterning process for next generation high-resolution devices using a non-chemically amplified metal containing photoresist and EUV lithography.

Call for Papers open for SEMICON Europa 2016 and 2016FLEX Europe

Wed, 2 Feb 2016
SEMI today announced the "Call for Papers" for technical sessions and presentations for SEMICON Europa 2016 which takes place 25-27 October in Grenoble, France.

imec reveals impact of DSA process variations on electrical performance of DSA-formed vias

Wed, 2 Feb 2016
Today, at SPIE Advanced Lithography Conference, imec will present electrical results of DSA-formed vias, gaining insight in the impact of DSA processing variations on electrical readout.

Mentor Graphics launches Veloce Apps

Fri, 2 Feb 2016
Mentor Graphics Corp. ushered in a new era of emulation by announcing new applications for the Veloce emulation platform.

Nova and imec developed scatterometry approach for self-aligned quadruple patterning process control

Fri, 2 Feb 2016
imec and Nova Measuring Instruments announced this week that they are jointly developing an innovative scatterometry approach to enable SAQP process control.

Spinning better electronic devices

Wed, 3 Mar 2016
Researchers demonstrate a proof-of-concept device that could take advantage of spin of electrons to potentially create more energy efficient electronic devices.

Light helps the transistor laser switch faster

Wed, 3 Mar 2016
A new study by University of Illinois engineers found that in the transistor laser, a device for next-generation high-speed computing, the light and electrons spur one another on to faster switching speeds than any devices available.

JOANNEUM RESEARCH and EV Group develop large-area nanoimprint lithography solutions

Thu, 3 Mar 2016
EVG and JOANNEUM RESEARCH today announced that they are collaborating on a joint-solution for research and development activities in large-area nanoimprinting leveraging the EVG770 automated UV-nanoimprint lithography step-and-repeat system.

GLOBALFOUNDRIES releases new 7SW SOI RF PDK featuring latest Keysight Technologies design software

Thu, 3 Mar 2016
GLOBALFOUNDRIES today announced the availability of a new set of process design kits (PDKs) with an interoperable co-design flow to help chip designers improve design efficiency and deliver differentiated RF front-end solutions in increasingly sophisticated mobile devices.

GLOBALFOUNDRIES broadens SiGe power amplifier portfolio

Tue, 3 Mar 2016
GLOBALFOUNDRIES today announced new advanced radio-frequency (RF) silicon solutions, further expanding the portfolio of Silicon Germanium (SiGe) power amplifier (PA) technologies designed to enable performance-optimized cellular and Wi-Fi solutions in increasingly sophisticated mobile devices and hardware.

Replacement for silicon devices looms big with ORNL discovery

Thu, 3 Mar 2016
Two-dimensional electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy's Oak Ridge National Laboratory.

IRT Nanoelec project integrates laser directly on silicon with a modulator

Fri, 3 Mar 2016
IRT Nanoelec today announced the first co-integration of a III-V/silicon laser and silicon Mach Zehnder modulator demonstrating 25 Gbps transmission on a single channel.

Imec enhances its silicon photonics platform to support 50Gb/s non-return-to-zero optical lane rates

Mon, 3 Mar 2016
Nanoelectronics research center imec presents at OFC 2016, the international event for both the science and business of optical communications held March 20-24, performance improvements of various key building blocks of its wafer-scale integrated silicon photonics platform (iSiPP).

ACM demonstrates damage-free cleaning technology on 1Xnm patterned wafer

Mon, 3 Mar 2016
ACM Research (Shanghai), Inc. has announced that it has solved the problem of patterned wafer cleaning.

Managing hazardous process exhausts in high volume manufacturing

Wed, 3 Mar 2016
Integrated sub-fab systems allow HVM fab operators to safely and efficiently implement new processes containing hazardous process chemicals.

A new class of MFCs with embedded flow diagnostics

Thu, 3 Mar 2016
Recent trends in multi-sensor measurements within a mass flow controller are reviewed, with a focus on controller self-diagnostics.

Molecular-scale ALD discovery could have industrial-sized impact

Thu, 3 Mar 2016
In the world of nano-scale technology, where work is conducted at the atomic level, even the smallest changes can have an enormous impact. And a new discovery by a University of Alberta materials engineering researchers has caught the attention of electronics industry leaders looking for more efficient manufacturing processes.

Quantum dots enhance light-to-current conversion in layered semiconductors

Fri, 4 Apr 2016
Harnessing the power of the sun and creating light-harvesting or light-sensing devices requires a material that both absorbs light efficiently and converts the energy to highly mobile electrical current.

imec and Crystal Solar demonstrate 22.5% nPERT Si solar cells on kerfless epitaxial wafers

Thu, 4 Apr 2016
Crystal Solar’s kerfless wafers are a disruptive solution for the solar cell industry, substantially reducing the cost of Si solar cells.

IEEE International Electron Devices Meeting announces 2016 Call for Papers

Fri, 4 Apr 2016
The 62nd annual IEEE International Electron Devices Meeting (IEDM), to be held at the San Francisco Union Square Hilton hotel December 3 - 7, 2016, has issued a Call for Papers seeking the world's best original work in all areas of microelectronics research and development.

'Odd couple' monolayer semiconductors align to advance optoelectronics

Fri, 4 Apr 2016
In a study led by the Department of Energy's Oak Ridge National Laboratory, scientists synthesized a stack of atomically thin monolayers of two lattice-mismatched semiconductors.

Gigaphoton unveils "GIGANEX"

Fri, 4 Apr 2016
Gigaphoton Inc., a major semiconductor lithography light source manufacturer, announced its new excimer laser brand “GIGANEX” on April 1, 2016.

IoT: Powering small devices

Fri, 4 Apr 2016
Are the power solutions the IoT needs arriving quickly enough?

Spintronic majority gates: A new paradigm for scaling

Tue, 4 Apr 2016
Spintronic majority gates could revolutionize circuit design. They will completely change the paradigm – both at device and circuit level – in how to approach scaling.

NREL theory establishes a path to high-performance 2-D semiconductor devices

Tue, 4 Apr 2016
Researchers at the Energy Department's National Renewable Energy Laboratory (NREL) have uncovered a way to overcome a principal obstacle in using two-dimensional (2D) semiconductors in electronic and optoelectronic devices.

NREL finds nanotube semiconductors well-suited for PV systems

Wed, 4 Apr 2016
Researchers at the Energy Department's National Renewable Energy Laboratory (NREL) discovered single-walled carbon nanotube semiconductors could be favorable for photovoltaic systems because they can potentially convert sunlight to electricity or fuels without losing much energy.

Hybrid nanoantennas -- next-generation platform for ultradense data recording

Thu, 4 Apr 2016
A group of scientists from ITMO University in Saint Petersburg has put forward a new approach to effective manipulation of light at the nanoscale based on hybrid metal-dielectric nanoantennas.

Best of both worlds

Mon, 5 May 2016
More, faster, better, cheaper. These are the demands of our device-happy and data-centered world. Meeting these demands requires technologies for processing and storing information.

Samsung PhD Fellowship program recognizes best and brightest student innovators

Thu, 5 May 2016
Each student will receive a Fellowship award of $50,000 as well as mentorship to support their ground-breaking research.

New technique could make large, flexible solar panels more feasible

Mon, 5 May 2016
A new, high-pressure technique may allow the production of huge sheets of thin-film silicon semiconductors at low temperatures in simple reactors at a fraction of the size and cost of current technology.

GLOBALFOUNDRIES releases performance-enhanced 130nm SiGe RF technology

Mon, 5 May 2016
GLOBALFOUNDRIES today announced a next-generation radio-frequency (RF) silicon solution for its Silicon Germanium (SiGe) high-performance technology portfolio.

Diamonds closer to becoming ideal semiconductors

Tue, 5 May 2016
Researchers find new method for doping single crystals of diamond.

Gigantic ultrafast spin currents

Wed, 5 May 2016
Scientists from TU Wien (Vienna) are proposing a new method for creating extremely strong spin currents. They are essential for spintronics, a technology that could replace today's electronics.

Tiny lasers enable faster, less power-hungry next-gen microprocessors

Fri, 6 Jun 2016
A group of scientists were able to fabricate tiny lasers directly on silicon, a huge breakthrough for the semiconductor industry and well beyond.

Spintronics development gets boost with new findings into ferromagnetism in Mn-doped GaAs

Tue, 6 Jun 2016
A research group at Tohoku University's WPI-AIMR has succeeded in finding the origin and the mechanism of ferromagnetism in Mn-doped GaAs.

Perovskite solar cells surpass 20 percent efficiency

Thu, 6 Jun 2016
EPFL researchers are pushing the limits of perovskite solar cell performance by exploring the best way to grow these crystals.

FEI launches three new tools for next-generation semiconductor manufacturing

Thu, 6 Jun 2016
FEI announced today the release of three new tools for process control and defect/failure analysis in advanced semiconductor manufacturing.

Circuit technology that resolves issues with high-frequency piezoelectric resonators

Fri, 6 Jun 2016
Realizing compact, low-cost, high-speed radio communication systems for the IoT age.

The switch that could double USB memory

Fri, 7 Jul 2016
Scientists at Hokkaido University have developed a device that employs both magnetic and electronic signals, which could provide twice the storage capacity of conventional memory devices, such as USB flash drives.

SUSS MicroTec announces new Mask Aligner series MA/BA Gen4

Fri, 7 Jul 2016
SUSS MicroTec, a supplier of equipment and process solutions for the semiconductor industry and related markets, announced the launch of the MA/BA Gen4 series today.

Gigaphoton's EUV light source achieves 250W output at 4.0% conversion efficiency

Thu, 7 Jul 2016
Gigaphoton Inc. has announced success in achieving 250W light output at 4.0% conversion efficiency with a Laser-Produced Plasma (LPP) light source prototype for EUV scanners, which the company is currently engaged in developing.

Imec announces the opening of imec Florida

Fri, 7 Jul 2016
Imec, a nanoelectronics research center, today announced the opening of imec Florida, a new entity focusing on photonics and high-speed electronics IC design based in Osceola, Florida.

Applied Materials' next-generation e-beam inspection system provides industry's highest resolution

Mon, 7 Jul 2016
Applied Materials, Inc. today announced its next-generation e-beam inspection system is delivering the highest resolution and image quality at the fastest throughput to leading foundry, logic, DRAM and 3D NAND customers as they move to advanced nodes.

EV Group rolls out automated metrology system for advanced packaging, MEMS manufacturing

Mon, 7 Jul 2016
EV Group (EVG) today introduced the EVG50 automated metrology system.

Leti develops 3D network-on-chip to improve high-performance computing

Tue, 7 Jul 2016
Leti, a CEA Tech institute, today announced it has developed a new on-chip communications system to improve high-performance computing (HPC) that is faster and more energy efficient than current solutions and is compatible with 3D architectures.​

The danger that lurks below

Tue, 7 Jul 2016
The semiconductor industry is moving quickly to adopt a variety of new materials in an effort to increase chip performance.

Chemical etching method helps transistors stand tall

Tue, 7 Jul 2016
University of Illinois researchers have developed a way to etch very tall, narrow finFETs, a type of transistor that forms a tall semiconductor "fin" for the current to travel over. The etching technique addresses many problems in trying to create 3-D devices, typically done now by stacking layers or carving out structures from a thicker semiconductor wafer.

Swapping substrates improves edges of graphene nanoribbons

Mon, 8 Aug 2016
Using inert boron nitride instead of silica creates precise zigzag edges in monolayer graphene.

Park Systems launches Park NX20 300mm research AFM with full 300mm semiconductor wafer scan

Fri, 8 Aug 2016
Park Systems announced NX20 300mm, the only AFM on the market capable of scanning the entire sample area of 300mm wafers using a 300mm vacuum chuck while keeping the system noise level below 0.5angstrom RMS.

Cascade Microtech releases 1/f measurement solution with Keysight Technologies

Fri, 8 Aug 2016
Cascade Microtech today announced the release of a comprehensive low-frequency noise measurement solution for device modeling, characterization and reliability testing with MeasureOne solution partner Keysight Technologies.

IBM scientists imitate the functionality of neurons with a phase-change device

Fri, 8 Aug 2016
Technology could lead to the development of neuromorphic computers with highly co-located memory and processing units to speed up cognitive computing and analyze IoT Big Data.

Making a solar energy conversion breakthrough with help from a ferroelectrics pioneer

Mon, 8 Aug 2016
Philadelphia-based team shows how a ferroelectric insulator can surpass shockley-queisser limit.

Lam Research enables next-generation memory with industry's first ALD process for low-fluorine tungsten fill

Tue, 8 Aug 2016
Lam Research Corp. (NASDAQ: LRCX), an advanced manufacturer of semiconductor equipment, today introduced an atomic layer deposition (ALD) process for depositing low-fluorine-content tungsten films, the latest addition to its ALTUS family of products.

POET Technologies announces milestone toward commercialization integrated opto-electronics tech platform

Wed, 8 Aug 2016
The milestone achieved is the first demonstration of functional Hetero-junction Field Effect Transistors (HFETs) down to 250nm effective gate lengths on the same proprietary epitaxy and utilizing the same integrated process sequence that was previously used to demonstrate high performance detectors.

Hexagonal boron nitride semiconductors enable cost-effective detection of neutron signals

Tue, 8 Aug 2016
Texas Tech University researchers demonstrate hexagonal boron nitride semiconductors as a cost-effective alternative for inspecting overseas cargo containers entering US ports.

KLA-Tencor announces new suite of reticle inspection technologies

Wed, 8 Aug 2016
Today, KLA-Tencor Corporation (NASDAQ: KLAC) introduced three advanced reticle inspection systems that address 10nm and below mask technologies: the Teron 640, Teron SL655 and Reticle Decision Center (RDC).

New theory could lead to new generation of energy friendly optoelectronics

Mon, 8 Aug 2016
Researchers at Queen's University Belfast and ETH Zurich, Switzerland, have created a new theoretical framework which could help physicists and device engineers design better optoelectronics.

Microsemi announces engineering scholarship program with University of Limerick

Tue, 8 Aug 2016
Microsemi Corporation today announced it is renewing its current 50,000 euros scholarship program for University of Limerick engineering students living in County Clare, where the company has its European headquarters in Ennis, Ireland.

Memory for future wearable electronics

Fri, 9 Sep 2016
Stretchable, flexible, reliable memory device inspired by the brain.

Lam Research introduces dielectric atomic layer etching capability for advanced logic

Wed, 9 Sep 2016
Lam Research Corp., an advanced manufacturer of semiconductor equipment, today announced that it is expanding its atomic layer etching (ALE) portfolio with the addition of ALE capability on its Flex dielectric etch systems.

M+W Group presents an integrated waste program for semiconductor facilities

Thu, 9 Sep 2016
The global high-tech engineering and construction company M+W Group has presented current and future trends, as well as state of the art solutions, for an integrated approach to waste reduction in order to improve the sustainability of semiconductor fabs

Liquid to liquid ambient cooling systems for semiconductor tools

Fri, 9 Sep 2016
An overview of liquid-to-liquid cooling systems and their operating principles.

UC Berkeley, University of Minnesota professors recognized at annual SRC TECHCON Conference

Tue, 9 Sep 2016
Semiconductor Research Corporation (SRC), a university-research consortium for semiconductors and related technologies, presented its highest honors Sept. 12 to professors from University of California, Berkeley and University of Minnesota at SRC's annual TECHCON conference in Austin, Texas.

GLOBALFOUNDRIES launches embedded MRAM on 22FDX platform

Thu, 9 Sep 2016
High-performance embedded non-volatile memory solution is ideally suited for emerging applications in advanced IoT and automotive.

Cascade Microtech introduces wafer-level electromigration test system

Thu, 9 Sep 2016
Cascade Microtech today announced the launch of the Estrada-EM system.

SRC honors professors from University of Chicago and University of Michigan

Thu, 9 Sep 2016
The Semiconductor Industry Association (SIA), in consultation with Semiconductor Research Corporation (SRC), today presented its University Research Award to professors from the University of Chicago and the University of Michigan in recognition of their outstanding contributions to semiconductor research.

Synopsys and TSMC collaborate to certify Custom Compiler for 16FFC process

Thu, 9 Sep 2016
Synopsys, Inc. today announced a collaboration with TSMC to complete the certification for its 16-nanometer (nm) FinFET Compact (16FFC) process for a suite of Synopsys' digital, custom and signoff tools from the Galaxy Design Platform.