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IBM breaks record with silicon nanowire MOSFET

Fri, 10 Oct 2013
IBM devices with a 90nm gate pitch demonstrated the highest performance ever reported for a SiNW device at a gate pitch below 100 nm.

PLANSEE Advanced Standard Ion Source offers 30% Longer Lifetime

Wed, 9 Sep 2013
PLANSEE’s Advanced Standard designs are made from high-performance metals, graphite, and ceramics and are available for most commercial ion implantation tools worldwide. PLANSEE’s most recent development is an extended life ion source for the Exceed IHC 9600 implantation system from Nissin. This source has been successfully qualified by a major IDM in a high volume manufacturing environment.

Quarterly semiconductor sales increase 6%, outperforming industry forecast

Wed, 9 Sep 2013
The Semiconductor Industry Association (SIA) announced that worldwide sales of semiconductors reached $74.65 billion during the second quarter of 2013, an increase of 6 percent from the first quarter when sales were $70.45 billion.

Driven by Apple and Samsung, light sensors achieve double-digit revenue growth

Wed, 9 Sep 2013
Light and proximity sensors in mobile handsets and tablets are set for expansive double-digit growth within a five-year period, thanks to increasing usage by electronic giants Samsung and Apple.

Edwards to be acquired by Atlas Copco

Wed, 9 Sep 2013
Edwards, a supplier of vacuum products, abatement systems and related value-added services, and Sweden-based Atlas Copco entered into a definitive merger agreement in a transaction valued at up to approximately $1.6 billion, including the assumption of debt.

Crossbar unveils resistive RAM with simple, three-layer structure

Wed, 9 Sep 2013
Crossbar, Inc., a start-up company, unveiled a new Resistive RAM (RRAM) technology that will be capable of storing up to one terabyte (TB) of data on a single 200mm2 chip.

IDC forecasts worldwide semiconductor revenue will grow 6.9% in 2013

Wed, 9 Sep 2013
Semiconductor revenue worldwide will see improved growth this year of 6.9 percent and reaching $320 billion according to the mid-year 2013 update of the Semiconductor Applications Forecaster (SAF) from International Data Corporation (IDC).

High mobility InGaAs MOSFETs get triangular

Tue, 10 Oct 2013
A research team in Japan has built a triangular InGaAs-on-insulator n-MOSFETs using MOVPE that has a high on-current of 930 µA/µm.

Jordan Valley lands order for FEOL tool

Tue, 10 Oct 2013
Jordan Valley Semiconductors Ltd. received another order for its recently introduced JVX7300LMI scanning X-ray in-line metrology tool for patterned and blanket wafers

IBM develops sub-20nm nanofluidic channels for lab-on-chip

Tue, 10 Oct 2013
At IEDM, IBM researchers will report on a CMOS-compatible 200 mm wafer-scale sub-20nm nanochannel fabrication method that enables stretching, translocation and real-time fluorescence microscopy imaging of single DNA molecules.

Grant funds development of improved nanoscale additive manufacturing

Tue, 10 Oct 2013
A new Department of Energy grant will fund research to advance an additive manufacturing technique for fabricating three-dimensional (3D) nanoscale structures from a variety of materials. Using high-speed, thermally-energized jets to deliver both precursor materials and inert gas, the research will focus on dramatically accelerating growth, improving the purity and increasing the aspect ratio of the 3D structures.

Ideal extraction assembly for VIISta HCP, HCS, Trident, and NexGen configured systems reduces glitching and increases service interval.

Wed, 2 Feb 2014
Plansee develops improved replacement parts from refractory metals, graphite, and ceramic for ion implanters from all major manufacturers. The latest development is a high performance extraction assembly for VIISta HCP, HCS, Trident, and NexGen configured systems.