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IBM breaks record with silicon nanowire MOSFET

Fri, 10 Oct 2013
IBM devices with a 90nm gate pitch demonstrated the highest performance ever reported for a SiNW device at a gate pitch below 100 nm.

High mobility InGaAs MOSFETs get triangular

Tue, 10 Oct 2013
A research team in Japan has built a triangular InGaAs-on-insulator n-MOSFETs using MOVPE that has a high on-current of 930 µA/µm.

Jordan Valley lands order for FEOL tool

Tue, 10 Oct 2013
Jordan Valley Semiconductors Ltd. received another order for its recently introduced JVX7300LMI scanning X-ray in-line metrology tool for patterned and blanket wafers

IBM develops sub-20nm nanofluidic channels for lab-on-chip

Tue, 10 Oct 2013
At IEDM, IBM researchers will report on a CMOS-compatible 200 mm wafer-scale sub-20nm nanochannel fabrication method that enables stretching, translocation and real-time fluorescence microscopy imaging of single DNA molecules.

Grant funds development of improved nanoscale additive manufacturing

Tue, 10 Oct 2013
A new Department of Energy grant will fund research to advance an additive manufacturing technique for fabricating three-dimensional (3D) nanoscale structures from a variety of materials. Using high-speed, thermally-energized jets to deliver both precursor materials and inert gas, the research will focus on dramatically accelerating growth, improving the purity and increasing the aspect ratio of the 3D structures.