JMAR achieves sub-100nm litho

December 12, 2003 – JMAR Technologies, San Diego, CA, says its has achieved sub-100nm imaging using its collimated plasma lithography has x-ray source and wafer exposure system.

The company used 1nm x-ray light and a single-layer resist, matching the collimated x-ray light to a simple binary membrane mask (made by IBM Microelectronics) to create patterns using proximity exposure.

The work was completed as part of contracts with the Defense Advanced Research Projects Agency (DARPA), the Army Research Laboratory, and the Naval Air Systems Command.


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