Inline Process Control of Advanced Thin Films at 65 nm

IC manufacturers worldwide are currently producing devices at the 130-nm node with 90-nm-generation products in pilot production, and 65-nm and 45-nm processes under development. Several process and integration issues identified at the 130-nm node have been resolved. However, the 90-nm genera-tion has several unique problems remaining to be solved. Some of the issues that still need resolution include high leakage currents of gate dielectrics, electromigration (EM) and barrier integrity, and Cu electroplating and chemical-mechanical planarization (CMP).

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