Surfscan SP2: Cost-Effective Production at the 65 nm Node

Each time the semiconductor industry has moved forward to the next node, and looked beyond to future nodes, new materials have played important roles in enabling the shrinking of critical dimensions. The 65 nm and 45 nm nodes will likely be marked by the introduction of metal oxides, organic porous and nonporous low-k dielectrics, metal gates and new silicides. Engineered substrates, such as silicon on insulator and its derivatives, will see significantly increased market adoption.

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