RIT touts litho “breakthrough” with EWL

February 9, 2006 – Researchers at the Rochester Institute of Technology have developed a new lithography method that they claim achieves results comparable with extreme-ultraviolet (EUV) lithography, and five years before requirements by the International Roadmap for Semiconductors.

The method, evanescent wave lithography (EWL), is capable of optically imaging geometries of 26nm, smaller than 1/20th the wavelength of visible light. “Immersion lithography has pushed the limits of optical imaging,” stated Bruce Smith, professor of microelectronic engineering and director of the Center for Nanolithography Research in RIT’s Kate Gleason College of Engineering. “Evanescent wave lithography continues to extend this reach well into the future.”

More details will be presented at the Microlithography 2006 symposium, sponsored by the International Society for Optical Engineering, on Feb. 22 in San Jose, CA.

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

LIVE NEWS FEED

NEW PRODUCTS

KLA-Tencor announces new defect inspection systems
07/12/2018KLA-Tencor Corporation announced two new defect inspection products at SEMICON West this week, addressing two key challenges in tool and process monit...
3D-Micromac unveils laser-based high-volume sample preparation solution for semiconductor failure analysis
07/09/2018microPREP 2.0 provides order of magnitude time and cost savings compared to traditional sample...
Leak check semiconductor process chambers quickly and reliably
02/08/2018INFICON,a manufacturer of leak test equipment, introduced the UL3000 Fab leak detector for semiconductor manufacturing maintenance teams t...