Backside Circuit Edit on Full-Thickness Silicon Devices

Backside Circuit Edit (CE) techniques, in which a Focused Ion Beam (FIB) operator accesses critical circuitry through the substrate of an IC, are popular with processor manufacturers and users of FlipChip and BGA-style packages. However, the thinning, polishing and etching required for backside CE might make sample chips too fragile to withstand the electrical tests. This paper explores the use of backside CE on full-thickness silicon devices instead. It shows how modern IR camera technology combined with advances in silicon trenching, navigation and positioning can make the full-thickness approach very viable for the FIB operator.



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