Fast Root Cause Analysis Based on Electrical Defect Localization

Semiconductor fabs must be able to rapidly perform root cause analysis (RCA) on yield-limiting defects in order to ramp up. This paper presents two RCA methodologies using specially designed high-density test structure arrays and a Focused Ion Beam (FIB)/Scanning Electron Microscope (SEM) DualBeam system. Through correlation between electrical test results and the yield-impacting defects, you can see how these methodologies can accurately identify the root causes of both hard and soft electrical failures.

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