Recent Developments in TEM Applications for the IC Industry

Scaling ICs to the 45-nanometer node or beyond requires precise measurement of film thickness, interfacial roughness, and chemical distribution. At those nodes, imperfections of magnetic lenses in high-resolution Transmission Electron Microscopy (TEM) may limit the interpretable spatial resolution and produce a blurring effect, called contrast delocalization, for non-periodic structures such as interfaces, edges, and defects. The new generation of aberration-corrected TEM systems reduces spherical aberrations in the objective lens, minimizing delocalization and dramatically improving usable image resolution. See how these new systems make it possible to obtain directly interpretable and atomically sharp images with sub-Angstrom resolution.



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