Pulsed Characterization of Charge Trapping Behavior in High K Gate Dielectrics

High dielectric constant (high º) gate materials, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), alumina (Al2O3), and their silicates1, have drawn a great deal of attention in recent years as potential materials for gate dielectrics in advanced CMOS processes. Due to their high dielectric constants, high º gates can be made thicker than SiO2 while achieving the same gate capacitance. The result is much lower leakage current – as many as several orders of magnitude lower.

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