Dual Channel Pulse Testing Simplifies RF Transistor Characterization

Device engineers and test managers are under tremendous pressure to make sure products get to market quickly and perform reliably. This is especially true of RF transistors destined for hot communications market segments. Whether the technology is based on III-V compounds or LDMOS, RF transistor tests must accurately characterize design and performance and do it cost effectively. Pulse I-V (PIV) testing is becoming indispensable in meeting these goals, because it avoids the negative effects of self-heating and transient trapped charges, which usually result in misleading data. (In the testing of compound semiconductors, dispersion is the terminology used to describe self-heating and carrier trapping basically anything that causes DC test results to differ from pulse I-V test results.)

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