Picosun launches plasma enhanced atomic layer deposition source, records global sales

April 19, 2011 — Picosun Oy, atomic layer deposition (ALD) system manufacturer, has launched production of plasma enhanced ALD (PEALD) systems based on a highly advanced ion-free remote plasma source, Picoplasma. Various excited species such as oxygen, nitrogen and hydrogen radicals with zero charge can be generated to broaden the range of ALD process chemistries. Metal and metal nitride thin films can be deposited at low temperatures with activated species. The remote source enables processing of fragile substrates and delicate device structures without plasma damage due to very low ion count but still high reactive species flux.

The proprietary Picoplasma source system can be mounted on existing SUNALE ALD reactors or the whole PEALD system can be installed as one compact, small footprint deposition unit of easy implementation, quick maintenance and low cost of ownership. The system can also be fully automated by integrating it into the Picoplatform cluster tool with cassette-to-cassette loading via a vacuum load lock.

Fast matching and stable power delivery of the plasma unit enable high yields with fast process speed and excellent film uniformity (thickness STD 1.3% with Al2O3 on silicon, deposited from TMA and oxygen radicals) and conformality in deep trenches up to AR of 48:1.

Picosun Oy is a Finnish, globally operating manufacturer of state-of-the-art ALD systems for micro- and nanotechnology applications, representing continuity to over three decades of ALD reactor design. Picosun Oy is a part of Stephen Industries Inc Oy. Learn more at www.picosun.com

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