MOCVD advances, InGaN enable record HEMT material from Kopin

March 29, 2012 – BUSINESS WIRE — Kopin Corporation (Nasdaq:KOPN), advanced III-V transistor wafer producer, achieved record 1290cm2/V.s electron mobility and 240ohms/square sheet resistance results from gallium nitride (GaN)-based high electron mobility transistor (HEMT) materials.

The advanced GaN-based materials can improve performance of next-generation power amplifiers and power switching converters. A range of new applications require "high-frequency, high-voltage, high-power, and/or high-temperature operation," noted Dr. John C.C. Fan, Kopin president and CEO. Also read: LED makers could diversify with GaN power electronics production

Results were published in the Applied Physics Letters of the American Institute of Physics: Laboutin et al., Applied Physics Letters, Vol. 100, p. 121909, March 23, 2012.

Kopin used indium gallium nitride (InGaN) as the conducting layer in HEMT structures grown on sapphire and silicon carbide (SiC) substrates. The InGaN channel layer provides a back-channel barrier for electron confinement that GaN does not offer. This enables deep sub-micron gate length devices to achieve ultra-high-frequency operation.

To prevent InGaN layers from becoming very rough during growth, Kopin uses proprietary metal-organic chemical vapor deposition (MOCVD) growth processes.

Kopin Corporation makes mobile computing headsets, ruggedized military imaging systems, ultra-small liquid crystal displays and heterojunction bipolar transistors (HBTs). Kopin has expertise in heteroepitaxy and III-V transistor wafers. For more information, please visit www.kopin.com.

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