May 25, 2012 – PRNewswire — Flash memory chip maker Spansion Inc. (NYSE:CODE) debuted its first family of single-level cell (SLC) NAND products using 4Xnm floating-gate technology.
The chips are available in 1-8Gb densities in 3.0V and 1.8V families. They meet reliability requirements with a 1-bit error correction code (ECC). The current generation SLC NAND components use floating-gate process technology and boast a temperature range of -40°C to +85°C; 100k cycle endurance; and 25μs random access, 25ns sequential access, and up to 200μs programming. It is packaged in a standard 48-pin TSOP.
The products suit embedded data storage in automotive, networking, and consumer applications, which are increasingly transitioning to the NAND architecture, said Touhid Raza, director of marketing for NAND, Spansion, in a recent interview with Solid State Technology. Spansion offers a broad non-volatile memory (NVM) architecture portfolio, said Raza. Parallel and serial NOR Flash enable designs with high-performance code execution and data storage requirements. The NAND segment of Flash memory has grown rapidly, he said, with densities increasing to keep pace with applications. SLC NAND can address data storage needs. In general terms, NOR offers faster initial access, while NAND brings faster repeat access and higher bandwidth.
The 1-8Gb SLC NAND products will be manufactured on 4Xnm technology currently, 3Xnm technology by end of 2012, and 2Xnm in 2014. Because the embedded memory market has long design cycles, Spansion is supporting each node design into 2017 and further, Raza explained.
The embedded segment requires long-term product support and reliability, said Russell Crane, product marketing manager, Sitara ARM processors, Texas Instruments, adding that his company is broadening its collaboration beyond parallel and serial Flash memory to include Spansion SLC NAND.
Spansion (NYSE: CODE) provides Flash memory technology. For more information, visit http://www.spansion.com.