June 1, 2012 — Singapore’s R&D organization, A*STAR Institute of Microelectronics (IME) and semiconductor supplier NXP Semiconductors (NASDAQ: NXPI) will collaborate on 200mm gallium-nitride-on-silicon (GaN-on-Si) process and technology development for high-voltage power devices, targeting end use in computing and communications, aerospace and automotive applications.
GaN-on-silicon devices will achieve better cost and scale at larger-diameter wafers. GaN-on-Si combines the higher operating temperature/power/frequency capabilities of GaN with the existing large-wafer supply chain of Si and CMOS wafer fab processes.
The work will be carried out in IME’s state-of-the art 200mm engineering fab, which offers GaN metal organic chemical vapor deposition (MOCVD) capabilities.
The Institute of Microelectronics (IME) is a research institute of the Science and Engineering Research Council of the Agency for Science, Technology and Research (A*STAR). IME’s mission is to add value to Singapore’s semiconductor industry by developing strategic competencies, innovative technologies and intellectual property; enabling enterprises to be technologically competitive; and cultivating a technology talent pool to inject new knowledge to the industry. Its key research areas are in integrated circuits design, advanced packaging, bioelectronics and medical devices, MEMS, nanoelectronics, and photonics. For more information about IME, please visit www.ime.a-star.edu.sg or learn about A*STAR at www.a-star.edu.sg.
NXP Semiconductors N.V. (NASDAQ: NXPI) provides high-performance mixed-signal and standard semiconductors for automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. Additional information can be found by visiting www.nxp.com.