SMIC and Maxscend collaborate on 55nm RF IP platform

Semiconductor Manufacturing International Corporation and Maxscend Technologies Inc., a RF IP company based in China, announced that Maxscend Bluetooth RF IP has been silicon proven on SMIC’s 55nm low leakage logic process. This IP has now been integrated into one of SMIC customers’ product tape-out.

The silicon proven Bluetooth RF IP is the result of a collaborative effort between SMIC and Maxscend and marks a significant milestone in SMIC RF IP platform setup. It has achieved a leading edge position in the industry and will provide mutual customers an excellent IP solution for the booming IoT market, as well as the prosperous mobile and tablet markets.

Dr. Tianshen Tang, Senior Vice President of SMIC Design Service Center commented, “We are pleased to be working with Maxscend. This important breakthrough will enable SMIC to offer leading 55nm RF IP solutions and secure SMIC’s position in China’s semiconductor foundry industry. We are confident that we can provide top quality solutions and design services for the customer.”

“It is really exciting to see that our Bluetooth and BLE RF IP has been silicon proven on SMIC 55nm platform,” said Zhihan Xu, Chief Executive Officer of Maxscend. “Besides the current huge demand of smart-phones, tablets, Bluetooth Audio and other areas of traditional Bluetooth technologies, there is tremendous interest coming from low-power Bluetooth in the IoT field. With the wide adoption of Bluetooth low energy technology, smart devices will become ubiquitous in everyday life: wearables, smart-home, smart-medical, smart-sports and many more. By partnering with SMIC, we are confident we have the capabilities to support global customers with superior Bluetooth technology and professional technical services.”

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