Crossbar, Inc., a start-up company pioneering a new category of very high capacity and high-performance non-volatile memory, today announced it will be disclosing another major technology breakthrough in their development of Resistive RAM (RRAM) at next week’s IEEE International Electron Devices Meeting (IEDM). Continuing to meet key technological milestones, the company first unveiled its RRAM technology in August 2013 and then demonstrated pre-production 1MB arrays using Crossbar’s patented “1TnR” technology for read/write operationsin June 2014.
Presented by Dr. Sung Hyun Jo, Crossbar senior fellow, the presentation will discuss how to overcome a common design challenge in high-density RRAM development, and will describe how a Field Assisted Superlinear Threshold (FAST) selector device can successfully suppress the sneak path current inherent in RRAM memory, another significant milestone needed to commercialize RRAM memory for high-density data applications.
Presentation Title: 3D-stackable Crossbar Resistive Memory Based on Field Assisted Superlinear Threshold (FAST) Selector
Speaker: Sung Hyun Jo, Ph.D., Crossbar’s Senior Fellow, Technology Development
When: Monday, December 15th at 4:05 pm
Where: IEDM Conference in the Hilton San Francisco Union Square, San Francisco, CA
Location: Continental Ballroom 6