Qualification test for 0.13 micron Slim Flash process technology was completed in both device performance and yield categories. All devices passed the WLR (Wafer Level Reliability) test, SRAM, and reliability test of standard cell library. In particular, high density EEPROM IP satisfied all categories related to endurance and data retention test.
In addition to the existing 0.13 micron EEPROM, MagnaChip plans to build a Slim Flash portfolio by merging Slim Flash into various technologies, including BCD and High Voltage. MagnaChip is currently engaging with customers using the new technology, with several products currently in development. Volume production of the Slim Flash process technology is expected to begin as early as the fourth quarter of 2016.
“With the introduction of our 0.13 micron Slim Flash process technology, customers now have access to a cost-saving and time-saving manufacturing process that will improve their overall time to market,” said YJ Kim, Chief Executive Officer of MagnaChip.