3D NAND Flash Process Integration and Architecture from A to Z

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Date: April 24, 2018 at 1:00 pm ET

Free to attend

Length: Approximately one hour

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Since 2006, many of new 3D NAND Flash cells have been proposed and commercialized on the market. Already, we have seen 3D NAND cell structure up to 64L/72L with single or multi-stack NAND string architecture. The memory density on Micron/Intel’s 64L 3D NAND 256 Gb/die reached 4.40 Gb/mm2 (256 Gb/die). In this session, we’ll overview 3D NAND Flash roadmap, products, cell design, structure, materials and process integration. The 3D NAND cell architecture from major NAND manufacturers including Samsung TCAT V-NAND, Toshiba/Western Digital BiCS, SK Hynix P-BiCS and Micron/Intel FG CuA will be reviewed and compared. Current and future technology challenges on 3D NAND will be discussed as well.

Speaker:

Dr_ Jeongdong ChoeDr. Jeongdong Choe, Senior Technical Fellow, TechInsights

Jeongdong Choe is a Senior Technical Fellow for TechInsights. He has a Ph.D. in electronic engineering and over 26 years’ experience including 100+ filed/issued patents in semiconductor process integration for DRAM, (V) NAND, SRAM and logic devices. Prior to joining TechInsights in 2011, he worked as a Team Lead in R&D for SK-Hynix and Samsung where he optimized process and device architectures with state-of-the-art technologies for mass production. Jeongdong has been a member of the ‘Future Technology Roadmap’ and ‘Patent Examination’ committees at Samsung, and has led a Process Consulting Group for advanced/emerging NVM devices such as STT-MRAM, ReRAM, and PCRAM and SOI/FinFET/HKMG device for 2x/1x nm future logic and memory devices. He has also written many articles including DRAM Makers Turn to New Process for Sub 2x/1x nm Cells, and Comparing Leading-Edge 2x/1x nm NAND Flash Memories. Jeongdong annually produces a widely distributed roadmaps for Memory Technology.  At Samsung, as Team Lead of NAND FLASH Process Architecture, he advanced next-generation devices, including 42 nm, 35 nm, 27 nm, 21 nm and 19 nm process nodes with optimized DPT (double patterning technology) for 3x and 2x devices and TPT (triple patterning technology) for 1x devices, as well as for sub-20 nm terabit generation for 3D-NAND, including TCAT and VG-NAND architecture.

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2 thoughts on “3D NAND Flash Process Integration and Architecture from A to Z

  1. D.W. Sohn

    Thank you for today’s Webinar.
    I am looking for the PDF version of your presentation from this web site, and it does NOT appear anywhere. Can you help me locate the site where I can retrieve the presentation material in PDF?

    Thank you.

    Best,

    DW

    Reply
    1. sdavis Post author

      Hi DW,

      TechInsights had some edits to make to the slides from this event. Please check back soon for the PDF version; it will be made available early next week. Thank you for attending the webinar!

      Thanks,
      Shannon

      Reply

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