Toshiba develops 40V N-channel power MOSFETs with improved thermal performance

In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.

The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.

The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI[1].
The DSOP Advance(WF) package has a wettable flank terminal structure[2].

Applications
– Electric power steering
– Load switches
– Electric pumps

Features
– Qualified for AEC-Q101, suitable for automotive applications
– Double-sided cooling package with top plate[3] and drain
– Improved AOI visibility due to wettable flank structure
– U-MOS IX-H series featuring low On-resistance and low noise characteristics

Main Specifications

 (@Ta=25 ℃)

Part
number

Absolute
maximum ratings

Drain-source
On-resistance
RDS(ON) max (mΩ)

Built-in
Zener Diode
between
Gate-Source

Series Package

Drain-
source
voltage
VDSS
(V)

Drain
current
(DC)
ID
(A)

@VGS=6 V @VGS=10 V
TPWR7904PB 40 150 1.3 0.79 No U-MOSⅨ-H

DSOP
Advance(WF)L

TPW1R104PB 120 1.96 1.14

DSOP
Advance(WF)M

Notes:
[1] EMI (Electromagnetic interference)
[2] Wettable flank terminal structure: A terminal structure that allows AOI (Automated Optical Inspection) of installation on boards.
[3] Be aware that the top plate has the same electric potential as the sources; however, not intended for an electrode.

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