ATMI, IBM to work on next-gen resist strips

December 5, 2007 - ATMI and IBM have agreed to jointly develop and demonstrate advanced chemical formulations for highly implanted photoresist strip applications targeting 45nm, 32nm, and 22nm chipmaking processes.

Under the agreement, the two firms will work on integrating new materials and thin-film processes, combining ATMI’s semiconductor materials and process experience with IBM’s IC design and manufacturing know-how. Work will be done at both ATMI’s facilities in Danbury, CT, and IBM’s TJ Watson Center in Yorktown Heights, NY.

“New materials are driving integrated circuit performance,” noted Tod Higinbotham, EVP of process solutions for ATMI, in a statement, adding that the partnership will address “specific materials issues that are plaguing the semiconductor industry worldwide today-and those that will become obstacles in the future.”

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