Date: June 21, 2016 at 1 PM ET
Free to attend
Length: Approximately one hour
Transistor performance has been greatly improved with strained silicon and high-k metal gates. Further performance improvements could be had by implementing III-V materials in the channel of nMOS transistors. Both III-V and Ge-based channels being considered for the pMOS device. High electron-mobility III-V semiconductors have been intensely researched as alternative channel materials for sub-7 nm technology nodes, but one of the main stumbling blocks is how to integrate them monolithically and cost-effectively with traditional CMOS silicon technology. This webcast will discuss the latest efforts in this area, including vertically stacked III-V nanowire.
Sponsored by Air Products
Air Products has been a leading global supplier of high-purity gases, chemicals, and delivery systems to the electronics industry for over 40 years. We serve all major segments of the industry with a unique combination of offerings, experience, and commitment. We’re advancing materials science. We’re advancing semiconductors. We’re advancing mobility. What can we help you advance? www.airproducts.com/advancing