Thin-film Processing Based Manufacturing Technology for Phase Change Memory (PcRAM)
Smart ICT (Information and Communication Technology) such as “Big Data”, “Cloud computing” and Smart Functionalities such as Stand-alone Self-activating MEMS/Sensors construct Smart Systems which enable IoT, IoE (Internet of Everything) thus Smart Society. To realize above-mentioned Smart Technologies, high-density, low- power consumption, wide-bandwidth, fast-operation semiconductor devices, as well as smart functional devices enabled by integrating functionalities with advanced semiconductor technologies including CMOS technologies are necessary. Thin-film functional material such as phase-change (Ge2Sb2Te5) and selector materials have been utilized to form advanced semiconductor devices including Phase-Change Random Access Memory (PcRAM) for Smart ICT solutions. In this session, we will show our development activities of phase-change material thin- film processing technologies including sputtering, MOCVD and plasma etching as well as manufacturing processes for Phase-Change Random Access Memory (PcRAM).