2015 IEDM Slide 3: Making RRAM with a FinFET and Its Dielectric

3. Making RRAM with a FinFET and Its Dielectric
Category: Memories
Paper 10.5 - 1Kbit FINFET Dielectric (FIND) RRAM in Pure 16nm FinFET CMOS Logic Process; Hsin Wei Pan et al, National Tsing-Hua University/Taiwan Semiconductor Manufacturing Co.

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A research team led by Taiwan’s National Tsing-Hua University will describe a novel way to build a resistive memory (RRAM): use a FinFET transistor for the “select” gate and the FinFET’s HfO2-based resistive dielectric film for a storage node of the RRAM cell. At the 16nm node, the RRAM cell size is 0.07632μm2 without any additional mask or process steps required. It exhibits low-voltage operation, good retention and excellent reliability overall.


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