2015 IEDM Slide 7: InGaAs Nanowire FETs on Silicon

7. InGaAs Nanowire FETs on Silicon
Category: Alternatives to Silicon
Paper 31.1 - Gate-All-Around InGaAs Nanowire FETS with Peak Transconductance of 2200 μS/μm at 50nm Lg Using a Replacement Fin RMG Flow; N. Waldron et al, Imec/ASM

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There have been many demonstrations of the potential performance benefits of III-V channels for low-power logic devices, but complete integration of these channels in devices made on standard 300mm silicon wafers would demonstrate their manufacturability and relevance to the industry. That day is getting closer, as a team led by Imec will discuss gate-all-around, high-performance InGaAs nanowire MOSFETs built on 300mm silicon wafers. Their high transconductance (gm=2200) indicates that despite having a lattice-mismatched substrate, the InGaAs channel material maintains its high carrier velocity.

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