2015 IEDM Slide 9: Better GaN HEMTs for High-Power Amplifiers

9. Better GaN HEMTs for High-Power Amplifiers
Category: Power Devices
Paper 9.1, Collapse-Free High Power InAlGaN/GaN-HEMT with 3 W/mm at 96 GHz; K. Makiyama et al, Fujitsu/Tokyo Institute of Technology

Click image for full-size view.

High electron-mobility transistors (HEMTs) made from GaN have great potential for use in high-power millimeter-wave amplifiers for high-data-rate wireless networks. Normally these transistors use an InAlN barrier layer to separate the channel from the source and drain. However, a team led by Fujitsu will show that InAlN is inadequate for devices intended for use in high-power amplifier applications because it facilitates “current collapse,” where a collection of electron traps occurs and alters the device’s performance. Instead, they used a higher-quality barrier material, InAlGaN. They also employed a novel double-layer SiN passivation technique. The 80nm-channel-length InAlGaN/GaN power HEMTs they built demonstrated a record 3 W/mm output power density at 96 GHz, which is a 60% improvement over the best results reported to date. Reliability also was superb. The power and reliability performance put the HEMTs at the state-of-the-art for use in W-band amplifiers (75–110 GHz).


HOME [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] NEXT

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Novel Wafer Analyzer for up to 300mm wafer using high speed Raman Imaging Technology
08/08/2016Nanophoton introduces RAMANdrive - a new Wafer Analyzer - for a wide range of applications at semiconductor market a...
Pfeiffer Vacuum introduces HiPace 2800 turbopump for ion implantation applications
07/06/2016Pfeiffer Vacuum has introduced the HiPace 2800 IT turbopump that is designed for ion implantation applications....
NanoFocus AG introduces new inspection system for semiconductors industry
05/31/2016NanoFocus AG, the developer and manufacturer of optical 3D surface measuring technology, introduces the new measuring system µ...