IEDM 2015 Slide 18: Better Modeling of STT-MRAMs

18. Better Modeling of STT-MRAMs
Category: Noteworthy Papers on Diverse Topics
Paper 28.5 - Physics-Based Compact Modeling Framework for State-of-the-Art and Emerging STT-MRAM Technology; Nuo Xu et al, Samsung

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Spin-transfer-torque magnetic random access memory (STT-MRAM) is a promising technology for future non-volatile, high-speed applications. But the internal magnetic dynamics of this new and complex technology aren’t completely understood, which poses a hurdle to optimizing and commercializing it. Computer modeling and simulation of STT-MRAMs is essential for a better understanding. However, until now building such complex models for circuit simulation has been laborious, time-consuming and prone to inaccuracy because it has relied on fitting to data from sample devices. Samsung researchers developed a simpler, more accurate computer modeling framework built from the essential physics. It enables the study of all possible magnetic interactions involved in the switching of the devices’ ferromagnetic layer, as well as charge transport and spin transfer torque interactions in magnetic tunneling junctions. The researchers verified the accuracy of their model by comparing it with actual data from 15nm STT-MRAMs. Their work will lead to better simulations of circuits and systems which incorporate these state-of-the-art devices.


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One thought on “IEDM 2015 Slide 18: Better Modeling of STT-MRAMs

  1. Deepanjan

    Does this modeluse monodomain magnets or multidomain magnets? If monodomain, then its old wine in new bottle. If multidomain, certainly interesting.

    Reply

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