MACOM announces new 650 W GaN on SiC HEMT pulsed power transistor

M/A-COM Technology Solutions Inc., a supplier of high-performance analog RF, microwave and optical semiconductor products, today announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.

The MAGX-000912-650L00/MAGX-000912-650L0S is a gold metalized, internally matched, GaN on SiC depletion mode RF power transistor. Operating in the 960 to 1215 MHz frequency range, the MAGX-000912-650L0x is a rugged and robust transistor, boasting a mean time to failure (MTTF) of 600 years.

The internally matched MAGX-000912-650L0x features 650 W of peak output power with 20 dB typical gain and 62 percent drain efficiency. The semiconductor structure is designed to achieve a high drain breakdown voltage (BVdss), which enables reliable and stable operation at 50V in extreme mismatched load conditions unparalleled with older semiconductor technologies. Other features include flat gain versus frequency performance and a common-source configuration for broadband class AB operation.

The MAGX-000912-650L0x was developed using wafer fabrication processes, and provides customers with high gain, efficiency, bandwidth and ruggedness to meet today’s demanding application needs. This transistor is optimized for civilian and military pulsed avionics amplifier applications in the 960 to 1215 MHz range, for Mode-S, TCAS, JTIDS, DME and TACAN operation.

“The transistor is a clear leader in high pulsed power GaN technology with 650 W of output power combined with excellent gain, efficiency and rugged performance,” said Gary Lopes, Senior Product Director, MACOM. “The device is an ideal candidate for customers looking to upgrade L-Band avionics systems to the next level of pulsed power performance and experience the solid reliability that is offered by MACOM GaN solutions.”

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