Toshiba starts construction of Fab 6 and memory R&D center at Yokkaichi, Japan

Toshiba Corporation (TOKYO:6502) today announced that it has started construction of a new semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory production base.

Fab 6 will be dedicated to production of BiCS FLASH, Toshiba’s 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.

Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH and new memories.

Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH production in line with market trends, and to retain leadership in innovation in the memory business.

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