Spin Memory, Inc. (Spin Memory), the MRAM developer, today announced a commercial agreement with Applied Materials, Inc. (Applied) to create a comprehensive embedded MRAM solution. The solution brings together Appliedâ€™s deposition and etch capabilities with Spin Memoryâ€™s MRAM process IP.
Key elements of the offering include Applied innovations in PVD and etch process technology, Spin Memoryâ€™s revolutionary Precessional Spin Currentâ„˘ (PSCâ„˘) structure (also known as the Spin Polarizer), and industry-leading perpendicular magnetic tunnel junction (pMTJ) technology from both companies. The solution is designed to allow customers to quickly bring up an embedded MRAM manufacturing module and start producing world-class MRAM-enabled products for both non-volatile (flash-like) and SRAM-replacement applications. Spin Memory intends to make the solution commercially available from 2019.
â€śIn the AI and IoT era, the industry needs high-speed, area-efficient non-volatile memory like never before,â€ť said Tom Sparkman, CEO at Spin Memory. â€śThrough our collaboration with Applied Materials, we will bring the next generation of STT-MRAM to market and address this growing need for alternative memory solutions.â€ť
â€śOur industry is driving a new wave of computing that will result in billions of sensors and a dramatic increase in data generation,â€ť said Steve Ghanayem, senior vice president of New Markets and Alliances at Applied Materials. â€śAs a result, we are seeing a renaissance in hardware innovation, from materials to systems, and we are excited to be teaming up with Spin Memory to help accelerate the availability of a new memory.â€ť